ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
2N3906
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
PNP General Purpose Transistors
(Ta=25 C)
-40
-5.0
-200
-40
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCE= -40 Vdc, I =0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -5.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
-5.0
-
-
-
-
-
-
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
-40
-40
-0.1
-0.1
d
B
C
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= -50 mAdc, IB= -5 mAdc)
Base-Emitter Saturation Voltage
(IC= -50 mAdc, IB= -5 mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
-
-
250
-
-
2N3906
WEITRON
http://www.weitron.com.tw
(IC= -10 mAdc, VCE=-1.0 Vdc)
(IC= -50 mAdc, VCE= 1.0 Vdc)
DC Current Gain
DC Current Gain
100
400
(1)
(2)
60
-0.3
-0.95
-
Classification of hFE(1)
Rank
O
Y
G
Range
100-200
200-300
300-400
TYP
-
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