UG8JT, UGF8JT, UGB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88767
www.vishay.com
03-Jul-02
1
New Product
Ultrafast Rectifiers
Reverse Voltage 500 to 600V
Forward Current 8.0A
Reverse Recovery Time 25ns
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
1
2
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (UGF8 Series)
TO-220AC (UG8 Series)
Dimensions in inches
and (millimeters)
TO-263AB (UGB8 Series)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2
CASE
0.370 (9.40)
0.360 (9.14)
Features
· Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
· Ideally suited for freewheeling diode and power factor
correction applications
· Soft recovery characteristics
· Excellent high temperature switching
· Optimized to reduce switching losses
· High temperature soldering in accordance with CECC
802 / Reflow guaranteed
· Glass passivated chip junction
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
UG8JT, UGF8JT, UGB8JT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88767
2
03-Jul-02
Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
UG8HT
UG8JT
Unit
Maximum repetitive peak reverse voltage
V
RRM
500
600
V
Maximum working reverse voltage
V
RWM
400
480
V
Maximum RMS voltage
V
RMS
350
420
V
Maximum DC blocking voltage
V
DC
500
600
V
Maximum average forward rectified current
I
F(AV)
8.0
A
Peak forward surge current 8.3ms single half sine-wave
I
FSM
100
A
superimposed on rated load (JEDEC Method) at T
C
= 100°C
Operating junction and storage temperature range
T
J
, T
STG
55 to +150
°C
RMS Isolation voltage (UGF types only)
4500
(1)
from terminals to heatsink with t = 1.0 second, RH
30%
V
ISOL
3500
(2)
V
1500
(3)
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
UG8HT
UG8JT
Unit
Maximum instantaneous
I
F
= 8A, T
J
= 25°C
V
F
1.75
V
forward voltage
(4)
I
F
= 8A, T
J
= 125°C
1.50
T
J
= 25°C
30
µ
A
Maximum DC reverse current at V
RWM
T
J
= 100°C
I
R
800
µ
A
T
J
= 125°C
4.0
mA
Maximum reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
t
rr
25
ns
Maximum reverse recovery time at
t
rr
50
ns
I
F
= 1.0A, di/dt = 50A/
µ
s, V
R
= 30V, I
rr
= 0.1 I
RM
Typical softness factor (t
b
/t
a
)
S
1.0
--
I
F
= 8.0A, di/dt = 240A/
µ
s, V
R
= 400V, I
rr
= 0.1 I
RM
Maximum reverse recovery current at
I
RM
5.5
A
I
F
= 8.0A, di/dt = 64A/
µ
s, V
R
= 400V, T
C
= 125°C
Maximum reverse recovery current at
I
RM
10
A
I
F
= 8.0A, di/dt = 240A/
µ
s, V
R
= 400V, T
C
= 125°C
Peak forward recovery time at
t
fr
500
ns
I
F
= 8.0A, di/dt = 64A/
µ
s, V
F
= 1.1V
F max
Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
UG8
UGF8
UGB8
Unit
Typical thermal resistance from junction to case
R
JC
2.2
5.0
2.2
°C/W
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(4) Pulse test: 300
µ
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
UG8
TO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
UGF8
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
31
13" reel, 800/reel, 4.8K/carton
UGB8
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13" reel, 800/reel, 4.8K/carton
UG8JT, UGF8JT, UGB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88767
www.vishay.com
03-Jul-02
3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
100
10
1,000
1
100
10
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
0
12.0
10.0
6.0
8.0
2.0
4.0
25
50
75
100
125
150
175
Fig. 1 -- Maximum Forward Current
Derating Curve
A
verage Forward Rectified Current (A)
Case Temperature (
°
C)
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 3 -- Typical Instantaneous
Forward Characteristics
0
20
60
40
100
80
Fig. 4 -- Typical Reverse Leakage
Characteristics
Instantaneous Reverse Current (
µ
A)
Percent of Rated Peak Reverse Voltage (%)
Resistive or Inductive Load
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
Reverse Voltage (V)
Junction Capacitance (pF)
1
0.1
10
100
100
10
1
10
100
1,000
10,000
1
UG8F
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= 25
°
C max.
Pulse Width = 300
µ
s
1% Duty Cycle
T
J
= 25
°
C
f = 1.0MH
Z
V
sig
= 50 mvp-p
0
300
350
250
150
200
50
100
25
50
75
100
125
150
Fig. 6 -- Reverse Switching
Characteristics
Stored Charge/Reverse Recovery T
ime,
(nC/ns)
Junction Temperature (
°
C)
Q
rr
T
rr
I
F
= 8.0A
V
r
= 30V
Fig. 2 -- Maximum Non-Repetitive Peak
Forward Surge Current
Fig. 5 -- Typical Junction Capacitance
di/dt =
UG8, UGB8
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