UG30APT thru UG30DPT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88762
www.vishay.com
03-Jul-02
1
Dual Ultrafast Plastic Rectifier
Reverse Voltage 50 to 200V
Forward Current 30A
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
UG30APT UG30BPT UG30CPT UG30DPT
Unit
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
V
Maximum RMS voltage
V
RMS
35
70
105
140
V
Maximum DC blocking voltage
V
DC
50
100
150
200
V
Maximum average forward rectified current at T
C
=120°C
I
F(AV)
30
A
Peak forward surge current
8.3 ms single half sine-wave superimposed
I
FSM
300
A
on rated load (JEDEC Method) at T
C
=120°C
Typical thermal resistance
(1)
R
JC
2.0
°C/W
Operating and storage temperature range
T
J
, T
STG
65 to +150
°C
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage per leg at 15A
1.0
30A
V
F
1.15
V
10A T
J
=100°C
0.85
Maximum DC reverse current at
T
A
=25°C
15
rated DC blocking voltage per leg
T
A
=100°C
I
R
800
µ
A
Maximum reverse recovery time
t
rr
20
ns
at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Maximum reverse recovery time at I
F
=15A,
T
J
= 25°C
35
V
R
=30V, di/dt=50 A/
µ
s, I
RR
=10% I
RM
T
J
=100°C
t
rr
50
ns
Maximum recovered stored charge
T
J
=25°C
22
I
F
=15A, V
R
=30V, di/dt=50 A/
µ
s
,
I
RR
=10% I
RM
T
J
=100°C
Q
rr
50
nC
Typical junction capacitance at 4.0V, 1MH
Z
C
J
70
pF
Note: (1) Thermal resistance from junction to case per leg mounted on heatsink
Features
· Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
· Ideally suited for use in very high frequency switching
power supplies, inverters and as a free wheeling diodes
· Ultrafast, 15 nanosecond typical recovery time
· Low leakage current · Glass passivated
· Soft recovery characteristics
· Excellent high temperature switching
Mechanical Data
Case: JEDEC TO-247AD molded plastic body over
passivated chips
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
Polarity: As marked
Mounting Position: Any
Weight: 2.2 oz., 6.3 g
Dimensions in inches and (millimeters)
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10 TYP.
BOTH SIDES
30
10
°
1 REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH
SIDES
PIN 2
TO-247AD
UG30APT thru UG30DPT
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88762
2
03-Jul-02
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
0.1
1
10
100
1
10
100
0
25
50
75
100
125
150
175
0
6
12
18
24
30
36
1
10
100
10
100
1,000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
Fig. 2 Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
Fig. 1 Maximum Forward Current
Derating Curve
A
verage Forward Rectified Current (A)
Case Temperature (
°
C)
Instantaneous Forward Voltage (V)
Fig. 3 Typical Instantaneous
Forward Characteristics
Fig. 4 Typical Reverse Leakage
Characteristics
Instantaneous Reverse Leakage
Current (
µ
A)
Percent of Rated Peak Reverse Voltage (%)
Resistive or Inductive Load
T
C
= 120
°
C
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 25
°
C
Pulse width = 300
µ
s
1% Duty Cycle
Instantaneous Forward Current (A)
Junction Temperature (
°
C)
Recovered Store Change / Reverse
Recovery T
ime
(nC/ns)
Fig. 5 Reverse Switching
Characteristics Per Leg
Reverse Voltage (V)
Junction Capacitance (pF)
Fig. 6 Typical Junction Capacitance
T
J
= 125
°
C
f = 1.0 MHz
Vsig = 50mVp-p
I
F
= 15A
V
R
= 30V
di/dt = 150A/
µ
s
di/dt = 20A/
µ
s
di/dt = 100A/
µ
s
di/dt = 50A/
µ
s
di/dt = 100A/
µ
s
di/dt = 150A/
µ
s
di/dt = 50A/
µ
s
di/dt = 20A/
µ
s
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