SUP/SUB75N06-12L
Vishay Siliconix
Document Number: 70807
S-59182--Rev. B, 07-Sep-98
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel 60-V (D-S), 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
60
0.012 @ V
GS
= 10 V
75
60
0.014 @ V
GS
= 4.5 V
70
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
SUP75N06-12L
SUB75N06-12L
TO-263
S
G
Top View
DRAIN connected to TAB
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 25
_
C
I
D
75
A
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 100
_
C
I
D
53
A
Pulsed Drain Current
I
DM
180
A
Avalanche Current
I
AR
60
Repetitive Avalanche Energy
a
L = 0.1 mH
E
AR
180
mJ
Power Dissipation
T
C
= 25
_
C (TO-220AB and TO-263)
P
D
142
b
W
Power Dissipation
T
A
= 25
_
C (TO-263)
c
P
D
3.75
c
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)
c
R
thJA
40
_
C/W
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
_
C/W
Junction-to-Case
R
thJC
1.05
Notes:
a.
Duty cycle
v
1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1" square PCB (FR-4 material).
SUP/SUB75N06-12L
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70807
S-59182--Rev. B, 07-Sep-98
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250
m
A
1
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Z
G
V l
D i C
I
V
DS
= 60 V, V
GS
= 0 V
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175
_
C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
75
A
D i S
O S
R
i
a
V
GS
= 10 V, I
D
= 30 A
0.0085
0.012
W
D i S
O S
R
i
a
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
_
C
0.019
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
_
C
0.024
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 30 A
0.0105
0.014
W
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125
_
C
0.0225
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175
_
C
0.03
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
60
S
Dynamic
b
Input Capacitance
C
iss
V
0 V V
25 V f
1 MH
3170
F
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
550
pF
Reversen Transfer Capacitance
C
rss
170
Total Gate Charge
c
Q
g
V
30 V V
10 V I
75 A
59
100
C
Gate-Source Charge
c
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 75 A
10
nC
Gate-Drain Charge
c
Q
gd
13.5
Turn-On Delay Time
c
t
d(on)
9
20
Rise Time
c
t
r
V
DD
= 30 V, R
L
= 0.4
W
8
20
ns
Turn-Off Delay Time
c
t
d(off)
DD
,
L
I
D
]
75 A, V
GEN
= 10 V, R
G
= 2.5
W
77
150
ns
Fall Time
c
t
f
20
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
s
75
A
Pulsed Current
I
SM
180
A
Forward Voltage
a
V
SD
I
F
= 75 A, V
GS
= 0 V
1.4
V
Reverse Recovery Time
t
rr
I
60 A di/d
100 A/
45
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 60 A, di/dt = 100 A/
m
s
2
A
Reverse Recovery Charge
Q
rr
0.045
m
C
Notes:
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUP/SUB75N06-12L
Vishay Siliconix
Document Number: 70807
S-59182--Rev. B, 07-Sep-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0
20
40
60
80
100
120
0
20
40
60
80
100
0
10
20
30
40
50
60
0.005
0.008
0.011
0.014
0.017
0.020
0
20
40
60
80
100
0
30
60
90
120
0
1
2
3
4
5
0
40
80
120
160
200
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
V
GS
Gate-to-Source Voltage (V)
T
ransconductance
(S)
g
fs
25
_
C
55
_
C
3 V
T
C
= 125
_
C
V
DS
= 30 V
I
D
= 75 A
V
GS
= 10 thru 5 V
V
GS
= 10 V
C
rss
T
C
= 55
_
C
25
_
C
125
_
C
4 V
V
GS
= 4.5 V
On-Resistance (
r
DS(on)
W
)
Drain Current (A)
I
D
2 V
0
1000
2000
3000
4000
5000
0
12
24
36
48
60
C
iss
C
oss
SUP/SUB75N06-12L
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70807
S-59182--Rev. B, 07-Sep-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
0.5
1.0
1.5
2.0
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 30 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
On-Resistance (
r
DS(on)
W
)
THERMAL RATINGS
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
300
10
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
C
= 25
_
C
Single Pulse
Maximum Drain Current vs.
Case Temperature
T
C
Case Temperature (
_
C)
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
5
10
4
10
3
10
2
10
1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
3
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Drain Current (A)
I
D
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