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Part Number SM6S

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SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88384
www.vishay.com
01-Aug-02
1
New Product
Surface Mount Automotive Transient Voltage Suppressors
Stand-off Voltage 10 to 36V
Peak Pulse Power 4600W (10/1000
µ
s)
3600W (10/10,000
µ
s)
Patented*
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000
µ
s waveform
4600
10/10,000
µ
s waveform
P
PPM
3600
W
Steady state power dissipation
P
D
6.0
W
Peak pulse current with a 10/1000
µ
s waveform
(NOTE 1)
I
PPM
See Table 1
A
Peak forward surge current, 8.3ms single half sine-wave
I
FSM
600
A
Typical thermal resistance junction to case
R
JC
0.95
°C/W
Operating junction and storage temperature range
T
J
, T
STG
­55 to +175
°C
Notes: (1) Non-repetitive current pulse derated above T
A
=25°C
0.093(2.4)
0.116(3.0)
0.059(1.5)
0.098(2.5)
0.098(2.5)
0.138(3.5)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
0.342(8.7)
0.327(8.3)
0.413(10.5)
0.374(9.5)
0.539(13.7)
0.524(13.3)
LEAD 2/METAL HEATSINK
0.020(0.5)
0.028(0.7)
0.016 (0.4) Min.
0.197(5.0)
0.185(4.7)
LEAD 1
0.628(16.0)
0.592(15.0)
*
Patent #'s:
4,980,315
5,166,769
5,278,095
Features
· Ideally suited for load dump protection
· Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
· High temperature stability due to unique oxide passiva-
tion and patented PAR
®
construction
· Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
· Low leakage current at T
J
= 175°C
· High temperature soldering guaranteed:
260°C for 10 seconds at terminals
· Meets ISO7637-2 surge spec.
· Low forward voltage drop
0.413(10.5)
0.374(9.5)
0.366(9.3)
0.343(8.7)
0.606(15.4)
0.583(14.8)
0.150(3.8)
0.126(3.2)
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
Mounting Pad Layout
Mechanical Data
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
DO-218AB
Dimensions in
inches and (millimeters)
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88384
2
01-Aug-02
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Maximum
Maximum
Max. Peak
Maximum
Reverse Reverse
Pulse
Clamping
Device Type
Breakdown Voltage
Test Current
Stand-off
Leakage
Leakage
Current
Voltage at
V
(BR)
I
T
Voltage
at V
WM
at V
WM
at 10/1000
µ
s
I
PPM
(V)
V
WM
I
D
Tc=175
o
C
Waveform
V
C
Min.
Max.
(mA)
(V)
(
µ
A)
I
D
(
µ
A)
(A)
(V)
SM6S10
11.1
13.6
5.0
10.0
15
250
245
18.8
SM6S10A
11.1
12.3
5.0
10.0
15
250
271
17.0
SM6S11
12.2
14.9
5.0
11.0
10
150
229
20.1
SM6S11A
12.2
13.5
5.0
11.0
10
150
253
18.2
SM6S12
13.3
16.3
5.0
12.0
10
150
209
22.0
SM6S12A
13.3
14.7
5.0
12.0
10
150
231
19.9
SM6S13
14.4
17.6
5.0
13.0
10
150
193
23.8
SM6S13A
14.4
15.9
5.0
13.0
10
150
214
21.5
SM6S14
15.6
19.1
5.0
14.0
10
150
178
25.8
SM6S14A
15.6
17.2
5.0
14.0
10
150
198
23.2
SM6S15
16.7
20.4
5.0
15.0
10
150
171
26.9
SM6S15A
16.7
18.5
5.0
15.0
10
150
189
24.4
SM6S16
17.8
21.8
5.0
16.0
10
150
160
28.8
SM6S16A
17.8
19.7
5.0
16.0
10
150
177
26.0
SM6S17
18.9
23.1
5.0
17.0
10
150
151
30.5
SM6S17A
18.9
20.9
5.0
17.0
10
150
167
27.6
SM6S18
20.0
24.4
5.0
18.0
10
150
143
32.2
SM6S18A
20.0
22.1
5.0
18.0
10
150
158
29.2
SM6S20
22.2
27.1
5.0
20.0
10
150
128
35.8
SM6S20A
22.2
24.5
5.0
20.0
10
150
142
32.4
SM6S22
24.4
29.8
5.0
22.0
10
150
117
39.4
SM6S22A
24.4
26.9
5.0
22.0
10
150
130
35.5
SM6S24
26.7
32.6
5.0
24.0
10
150
107
43.0
SM6S24A
26.7
29.5
5.0
24.0
10
150
118
38.9
SM6S26
28.9
35.3
5.0
26.0
10
150
99
46.6
SM6S26A
28.9
31.9
5.0
26.0
10
150
109
42.1
SM6S28
31.1
38.0
5.0
28.0
10
150
92
50.1
SM6S28A
31.1
34.4
5.0
28.0
10
150
101
45.4
SM6S30
33.3
40.7
5.0
30.0
10
150
86
53.5
SM6S30A
33.3
36.8
5.0
30.0
10
150
95
48.4
SM6S33
36.7
44.9
5.0
33.0
10
150
78
59.0
SM6S33A
36.7
40.6
5.0
33.0
10
150
86
53.3
SM6S36
40.0
48.9
5.0
36.0
10
150
72
64.3
SM6S36A
40.0
44.2
5.0
36.0
10
150
79
58.1
Note: For all types maximum V
F
= 1.9V at I
F
= 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88384
www.vishay.com
01-Aug-02
3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Power Derating Curve
0
2.0
4.0
6.0
8.0
0
50
100
150
200
P
o
w
er Dissipation (W)
Re
v
erse Surge P
o
w
er (W)
Pulse Width (ms) ­ 1/2 I
PP
Exponential Waveform
1,000
10,000
10
100
Case Temperature (
°
C)
0
50
100
150
0
10
20
30
40
Input P
eak Pulse Current %
Time, ms (t)
Pulse Waveform
Reverse Power Capability
T
A
= 25
°
C
Pulse width (t
d
) is defined as
the point where the peak
current decays to 50% of I
PP
t
d
t
r
= 10
µ
s
Peak Value I
PP
Half Value ­
I
PP
2
Load Dump Power Characteristics
(10ms Exponential Waveform)
0
2,000
1,000
3,000
4,000
5,000
6,000
25
50
75
100
125
150
175
Load Dump P
o
w
er (W)
Case Temperature (
°
C)
T
r
ansient
Ther
mal Impedance (
°
C/W)
0.01
1
10
100
10
1
100
0.01
0.1
t ­ Pulse Width (sec.)
0.1
R
JA
R
JC
Typical Transient Thermal Impedance