FEATURES
D
100% R
g
Tested
Si4953DY
Vishay Siliconix
Document Number: 70153
S-31726--Rev. E, 18-Aug-03
www.vishay.com
1
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.053 @ V
GS
= -10 V
-4.9
-30
0.095 @ V
GS
= -4.5 V
-3.6
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
Ordering Information: Si4953DY
Si4953DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
-4.9
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
-3.9
A
Pulsed Drain Current
I
DM
-30
A
Continuous Source Current (Diode Conduction)
a
I
S
-1.7
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.0
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.3
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
_
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com
Si4953DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 70153
S-31726--Rev. E, 18-Aug-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
-1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55
_
C
-25
m
A
On-State Drain Current
b
I
D(on)
V
DS
v
-5 V, V
GS
= -10 V
-20
A
Drain Source On State Resistance
b
r
DS( )
V
GS
= -10 V, I
D
= -4.9 A
0.043
0.053
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= -4.5 V, I
D
= -3.6 A
0.070
0.095
W
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -4.9 A
10
S
Diode Forward Voltage
b
V
SD
I
S
= -1.7 A, V
GS
= 0 V
0.8
-1.2
V
Dynamic
a
Total Gate Charge
Q
g
16
25
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -4.9 A
5
nC
Gate-Drain Charge
Q
gd
2
Gate Resistance
R
g
2
7.1
W
Turn-On Delay Time
t
d(on)
9
15
Rise Time
t
r
V
DD
= -15 V, R
L
= 15
W
13
20
Turn-Off Delay Time
t
d(off)
V
DD
= -15 V, R
L
= 15
W
I
D
^
-1 A, V
GEN
= -10 V, R
G
= 6
W
25
40
ns
Fall Time
t
f
15
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/
m
s
60
90
Notes
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
Si4953DY
Vishay Siliconix
Document Number: 70153
S-31726--Rev. E, 18-Aug-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
0
4
8
12
16
20
0.50
0.75
1.00
1.25
1.50
1.75
-50
-25
0
25
50
75
100
125
150
0.00
0.04
0.08
0.12
0.16
0.20
0
6
12
18
24
30
0
300
600
900
1200
1500
0
6
12
18
24
30
0
6
12
18
24
30
0
2
4
6
8
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
= 10, 9, 8, 7, 6 V
5 V
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
T
C
= -55
_
C
125
_
C
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 4.9 A
-
On-Resistance (
r
DS(on)
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 4.9 A
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
)
V
GS
= 10 V
V
GS
= 4.5 V
25
_
C
4 V
2, 1 V
3 V
Si4953DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 70153
S-31726--Rev. E, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
-
On-Resistance (
r
DS(on)
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
T
J
- Temperature (
_
C)
Time (sec)
Power (W)
0.00
0.15
0.30
0.45
0.60
0.75
0
2
4
6
8
10
-0.3
-0.1
0.1
0.3
0.5
0.7
-50
-25
0
25
50
75
100
125
150
I
D
= 4.9 A
I
D
= 250
µ
A
V
ariance (V)
V
GS(th)
20
10
1
0.3
0.5
0.7
0.9
1.1
1.3
0
10
20
30
40
50
0.01
0.10
1.00
10.00
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
30
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
T
J
= 150
_
C
T
J
= 25
_
C
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