FEATURES
D
TrenchFET
r
Power MOSFET
D
V
GS
Surge Protection to 18 V
D
ESD Protected: 4000 V
APPLICATIONS
D
Battery Switch
D
Load Switch
Si4429EDY
Vishay Siliconix
New Product
Document Number: 70709
S-04712--Rev. A, 24-Sep-01
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.0105 @ V
GS
= 10 V
13.0
30
0.0125 @ V
GS
= 4.5 V
12.0
0.0195 @ V
GS
= 2.5 V
9.0
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
D
S
G
5.5 k
W
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
"
12
V
_
a
T
A
= 25
_
C
13.0
9.4
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
10.0
7.5
Pulsed Drain Current
I
DM
50
A
continuous Source Current (Diode Conduction)
a
I
S
2.5
1.3
T
A
= 25
_
C
3.0
1.5
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.9
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
32
42
Maximum Junction-to-Ambient
a
Steady State
R
thJA
68
85
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
18
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4429EDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 70709
S-04712--Rev. A, 24-Sep-01
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.60
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12
V
"
20
V
DS
= 24 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
_
C
5
On-State Drain Current
a
I
D(on)
V
DS
v
5 V, V
GS
= 10 V
30
A
V
GS
= 10 V, I
D
= 13.0 A
0.0086
0.0105
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 12.0 A
0.0105
0.0125
W
DS(on)
V
GS
= 2.5 V, I
D
= 9.0 A
0.0160
0.0195
Forward Transconductance
a
g
fs
V
DS
= 15
V, I
D
= 13.0 A
40
S
Diode Forward Voltage
a
V
SD
I
S
= 2.5 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
51
75
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 13.0 A
9
nC
Gate-Drain Charge
Q
gd
12.0
Turn-On Delay Time
t
d(on)
14
21
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
19
29
m
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
54
80
m
s
Fall Time
t
f
41
62
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
20
0
6
12
18
24
30
Gate-Current vs. Gate-Source Voltage
V
GS
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
Gate-to-Source Voltage (V)
Gate Current (
I
GSS
m
A)
0
5
10
15
20
T
J
= 25
_
C
T
J
= 150
_
C
Gate Current (mA)
I
GSS
Si4429EDY
Vishay Siliconix
New Product
Document Number: 70709
S-04712--Rev. A, 24-Sep-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
0.00
0.01
0.02
0.03
0.04
0.05
0
10
20
30
40
50
0
10
20
30
40
50
0
2
4
6
8
10
0
1
2
3
4
5
0
10
20
30
40
50
60
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
1500
3000
4500
6000
7500
9000
0
6
12
18
24
30
V
GS
= 10 thru 3 V
25
_
C
T
C
= 125
_
C
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 13.0 A
V
GS
= 10 V
I
D
= 13.0 A
V
GS
= 4.5 V
V
GS
= 2.5 V
55
_
C
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
V
GS
= 10 V
2 V
Si4429EDY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 70709
S-04712--Rev. A, 24-Sep-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.2
1.5
0.000
0.016
0.032
0.048
0.064
0.080
0
1
2
3
4
5
6
1
10
50
I
D
= 13.0 A
0
0.3
0.6
0.9
T
J
= 150
_
C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
= 25
_
C
0
30
50
10
29
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
40
10
3
10
2
1
10
600
10
1
10
4
100
0.4
0.2
0.0
0.2
0.4
0.6
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
600
100
10
1
10
2
10
Si4429EDY
Vishay Siliconix
New Product
Document Number: 70709
S-04712--Rev. A, 24-Sep-01
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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