Si4401DY
Vishay Siliconix
New Product
Document Number: 71226
S-03452--Rev. C, 09-Apr-01
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.0155 @ V
GS
= 10 V
10.5
40
0.0225 @ V
GS
= 4.5 V
8.7
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S S S
G
D
D
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
Gate-Source Voltage
V
GS
"
20
V
_
a
T
A
= 25
_
C
10.5
8.7
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
8.3
5.9
Pulsed Drain Current
I
DM
50
A
continuous Source Current (Diode Conduction)
a
I
S
2.7
1.36
T
A
= 25
_
C
3.0
1.5
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.9
0.95
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
33
42
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
84
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4401DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71226
S-03452--Rev. C, 09-Apr-01
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20
V
"
100
nA
V
DS
= 32 V, V
GS
= 0 V
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V, T
J
= 70
_
C
10
m
A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
30
A
V
GS
= 10 V, I
D
= 10.5 A
0.013
0.0155
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 8.7 A
0.0185
0.0225
W
Forward Transconductance
a
g
fs
V
DS
= 15
V, I
D
= 10.5 A
26
S
Diode Forward Voltage
a
V
SD
I
S
= 2.7 A, V
GS
= 0 V
0.74
1.1
V
Dynamic
b
Total Gate Charge
Q
g
37.5
50
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 10.5 A
14.3
nC
Gate-Drain Charge
Q
gd
10.7
Turn-On Delay Time
t
d(on)
17
30
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
18
30
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
122
190
ns
Fall Time
t
f
55
85
Gate Resistance
R
g
3.8
W
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/
m
s
45
ns
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 10 thru 5 V
T
C
= 125
_
C
55
_
C
2 V
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
4 V
3 V
Si4401DY
Vishay Siliconix
New Product
Document Number: 71226
S-03452--Rev. C, 09-Apr-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance (
r
DS(on)
W
)
0
1300
2600
3900
5200
6500
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
15
30
45
60
75
0.000
0.008
0.016
0.024
0.032
0.040
0
10
20
30
40
50
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 10.5 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
= 10.5 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
C
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
2
4
6
8
10
T
J
= 25
_
C
I
D
= 10.5 A
50
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
V
GS
= 4.5 V
T
J
= 150
_
C
Si4401DY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71226
S-03452--Rev. C, 09-Apr-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
60
100
20
40
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
80
10
3
10
2
1
10
600
10
1
10
4
100
0.4
0.2
0.0
0.2
0.4
0.6
0.8
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
0.1
10
1
0.01
0.001
PDF 
ZIP