FEATURES
D
TrenchFET
r
Power MOSFET
APPLICATIONS
D
Load Switch
D
PA Switch
Si2333DS
Vishay Siliconix
New Product
Document Number: 72023
S-22121--Rev. B, 25-Nov-02
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.032 @ V
GS
= -4.5 V
-5.3
-12
0.042 @ V
GS
= -2.5 V
- 4.6
0.059 @ V
GS
= -1.8 V
- 3.9
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2333DS (E3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
-12
Gate-Source Voltage
V
GS
$
8
V
_
a, b
T
A
= 25
_
C
- 5.3
-4.1
Continuous Drain Current
(T
J
= 150
_
C)
a, b
T
A
= 70
_
C
I
D
-4.2
-3.3
Pulsed Drain Current
I
DM
-20
A
Continuous Source Current (Diode Conduction)
a, b
I
S
-1.0
-0.6
T
A
= 25
_
C
1.25
0.75
Maximum Power Dissipation
a, b
T
A
= 70
_
C
P
D
0.8
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
5 sec
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40
50
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
b.
Pulse width limited by maximum junction temperature.
Si2333DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72023
S-22121--Rev. B, 25-Nov-02
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250
m
A
-12
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
-0.40
-1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
8 V
"
100
nA
V
DS
= -9.6 V, V
GS
= 0 V
-1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 55
_
C
-10
m
A
On-State Drain Current
a
I
D(on)
V
DS
v
-5 V, V
GS
= -4.5 V
-20
A
V
GS
= -4.5 V, I
D
= -5.3 A
0.025
0.032
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -4.6 A
0.033
0.042
W
V
GS
= -1.8 V, I
D
= -2.0 A
0.046
0.059
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -5.3 A
17
S
Diode Forward Voltage
V
SD
I
S
= -1.0 A, V
GS
= 0 V
0.7
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
11.5
18
Gate-Source Charge
Q
gs
V
DS
= -6 V, V
GS
= -4.5 V
I
D
^
-5.3 A
1.5
nC
Gate-Drain Charge
Q
gd
I
D
^
-5.3 A
3.2
Input Capacitance
C
iss
1100
Output Capacitance
C
oss
V
DS
= -6 V, V
GS
= 0, f = 1 MHz
390
pF
Reverse Transfer Capacitance
C
rss
300
Switching
c
t
d(on)
25
40
Turn-On Time
t
r
V
DD
= -6 V, R
L
= 6
W
^
45
70
t
d(off)
I
D
^
-1.0 A, V
GEN
= -4.5 V
R
G
= 6
W
72
110
ns
Turn-Off Time
t
f
60
90
Notes
a.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.
Si2333DS
Vishay Siliconix
New Product
Document Number: 72023
S-22121--Rev. B, 25-Nov-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
300
600
900
1200
1500
1800
0
3
6
9
12
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0.00
0.03
0.06
0.09
0.12
0.15
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
0
1
2
3
4
5
0
3
6
9
12
15
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
V
GS
= 5 thru 2.5 V
25
_
C
C
rss
C
oss
C
iss
V
DS
= 6 V
I
D
= 5.3 A
V
GS
= 4.5 V
I
D
= 5.3 A
V
GS
= 4.5 V
V
GS
= 2.5 V
1 V
125
_
C
1.5 V
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
- Gate-to-Source V
oltage
(V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
V
GS
- On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
- On-Resistance (
r
DS(on)
W
)
V
GS
= 1.8 V
2 V
T
C
= -55
_
C
Si2333DS
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72023
S-22121--Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 140
m
A
1.0
1.2
0.00
0.03
0.06
0.09
0.12
0.15
0
1
2
3
4
5
0.1
10
20
I
D
= 5.3 A
0.01
0
1
6
12
2
4
10
600
0.1
0.0
0.2
0.4
0.6
0.8
T
J
= 150
_
C
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
- On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
- Source Current (A)
I
S
Time (sec)
8
10
100
T
A
= 25
_
C
1
T
J
= 25
_
C
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
A
= 25
_
C
Single Pulse
- Drain Current (A)
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
D(on)
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
D
= 2 A
Si2333DS
Vishay Siliconix
New Product
Document Number: 72023
S-22121--Rev. B, 25-Nov-02
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.01
10
- 3
10
- 2
1
10
600
10
- 1
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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