FEATURES
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
Si2325DS
Vishay Siliconix
New Product
Document Number: 73238
S-42449--Rev. A, 10-Jan-05
www.vishay.com
1
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
Q
g
(Typ)
150
1.2 @ V
GS
= -10 V
-0.69
7 7
-150
1.3 @ V
GS
= -6.0 V
-0.66
7.7
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2325DS (D5)*
*Marking Code
Ordering Information: Si2325DS -T1--E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
-150
V
Gate-Source Voltage
V
GS
$20
V
Continuous Drain Current
(T
J
= 150_C)
a, b
T
A
= 25_C
I
D
-0.69
-0.53
Continuous Drain Current
(T
J
= 150_C)
a, b
T
A
= 70_C
I
D
-0.55
-0.43
A
Pulsed Drain Current
I
DM
-1.6
A
Continuous Source Current (Diode Conduction)
a, b
I
S
-1.0
-0.6
Single-Pluse Avalanche Current
L = 1 0 mH
I
AS
4.5
Single-Pulse Avalanche Energy
L = 1.0 mH
E
AS
1.01
mJ
Maximum Power Dissipation
a, b
T
A
= 25_C
P
D
1.25
0.75
W
Maximum Power Dissipation
a, b
T
A
= 70_C
P
D
0.8
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 5 sec
R
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40
50
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
b.
Pulse width limited by maximum junction temperature.
Si2325DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73238
S-42449--Rev. A, 10-Jan-05
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250 mA
-150
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-2.5
-4.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -150 V, V
GS
= 0 V
-1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -150 V, V
GS
= 0 V, T
J
= 55_C
-10
mA
On-State Drain Current
a
I
D(on)
V
DS
v -15 V, V
GS
= 10 V
-1.6
A
Drain Source On Resistance
a
r
DS( )
V
GS
= -10 V, I
D
= -0.5 A
1.0
1.2
W
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= -6.0 V, I
D
= -0.5 A
1.05
1.3
W
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -0.5 A
2.2
S
Diode Forward Voltage
V
SD
I
S
= -1.0 A, V
GS
= 0 V
0.7
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
V 75 V V 10 V
7.7
12
Gate-Source Charge
Q
gs
V
DS
= -75 V, V
GS
= 10 V
I
D
^ -0.5 A
1.5
nC
Gate-Drain Charge
Q
gd
I
D
^ -0.5 A
2.5
Gate Resistance
R
g
f = 1.0 MHz
9
W
Input Capacitance
C
iss
340
510
Output Capacitance
C
oss
V
DS
= -25 V, V
GS
= 0, f = 1 MHz
30
pF
Reverse Transfer Capacitance
C
rss
DS
GS
16
p
Switching
c
Turn-On Time
t
d(on)
7
11
Turn-On Time
t
r
V
DD
= -75 V, R
L
= 75 W
I
D
^ -1 0 A V
GEN
= -10 V
11
17
ns
Turn Off Time
t
d(off)
I
D
^ -1.0 A, V
GEN
= -10 V
R
g
= 6 W
16
25
ns
Turn-Off Time
t
f
g
11
17
Body Diode Reverse Recovery Charge
Q
rr
I
F
= 0.5 A, di/dt = 100 A/ms
90
135
nC
Notes
a.
Pulse test: PW v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Si2325DS
Vishay Siliconix
New Product
Document Number: 73238
S-42449--Rev. A, 10-Jan-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
100
200
300
400
500
0
30
60
90
120
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
V
GS
= 10 thru 5 V
25_C
C
rss
C
oss
C
iss
V
DS
= 75 V
I
D
= 0.5 A
V
GS
= 10 V
I
D
= 0.5 A
V
GS
= 6 V
V
GS
= 10 V
3 V
-55_C
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
4 V
T
C
= 125_C
r
DS
(
on)
-
On-Resiistance
(Normalized)
Si2325DS
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73238
S-42449--Rev. A, 10-Jan-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.5
-0.2
0.1
0.4
0.7
1.0
1.3
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
1.0
1.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
0.1
1
3
I
D
= 0.5 A
0.01
0
1
6
12
2
4
10
600
0.1
0.0
0.2
0.4
0.6
0.8
T
J
= 150_C
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
Time (sec)
8
10
100
T
A
= 25_C
T
J
= 25_C
Safe Operating Area
10
0.1
0.1
1
10
1000
0.001
1
T
A
= 25_C
Single Pulse
-
Drain Current (A)
I
D
0.01
I
DM
Limited
I
D(on)
Limited
*r
DS(on)
Limited
BV
DSS
Limited
1.2
V
DS
- Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is
specified
1 ms
10 ms
100 ms
dc, 100 s
10 ms
100 ms
10 s, 1 s
100
Si2325DS
Vishay Siliconix
New Product
Document Number: 73238
S-42449--Rev. A, 10-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fectiv
e T
ransient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1
10
600
10
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73238
.
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