Документация и описания www.docs.chipfind.ru
Si2301DS
Vishay Siliconix
Document Number: 70627
S-31990--Rev. E, 13-Oct-03
www.vishay.com
1
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
20
0.130 @ V
GS
= -4.5 V
-2.3
-20
0.190 @ V
GS
= -2.5 V
-1.9
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
"8
V
Continuous Drain Current
(T
J
= 150_C)
b
T
A
= 25_C
I
D
-2.3
Continuous Drain Current
(T
J
= 150_C)
b
T
A
= 70_C
I
D
-1.5
A
Pulsed Drain Current
a
I
DM
-10
A
Continuous Source Current (Diode Conduction)
b
I
S
-1.6
Power Dissipation
b
T
A
= 25_C
P
D
1.25
W
Power Dissipation
b
T
A
= 70_C
P
D
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
b
R
100
_C/W
Maximum Junction-to-Ambient
c
R
thJA
166
_C/W
Notes
a.
Pulse width limited by maximum junction temperature.
b.
Surface Mounted on FR4 Board, t v 5 sec.
c.
Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si2301DS
Vishay Siliconix
www.vishay.com
2
Document Number: 70627
S-31990--Rev. E, 13-Oct-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250 mA
-20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "8 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V
-1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55_C
-10
mA
On State Drain Current
a
I
D( )
V
DS
v -5 V, V
GS
= -4.5 V
-6
A
On-State Drain Current
a
I
D(on)
V
DS
v -5 V, V
GS
= -2.5 V
-3
A
Drain Source On Resistance
a
r
DS( )
V
GS
= -4.5 V, I
D
= -2.8 A
0.105
0.130
W
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -2.0 A
0.145
0.190
W
Forward Transconductance
a
g
fs
V
DS
= -5 V, I
D
= -2.8 A
6.5
S
Diode Forward Voltage
V
SD
I
S
= -1.6 A, V
GS
= 0 V
-0.80
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
5.8
10
Gate-Source Charge
Q
gs
V
DS
= -6 V, V
GS
= -4.5 V
I
D
^ -2.8 A
0.85
nC
Gate-Drain Charge
Q
gd
I
D
^ -2.8 A
1.70
Input Capacitance
C
iss
415
Output Capacitance
C
oss
V
DS
= -6 V, V
GS
= 0, f = 1 MHz
223
pF
Reverse Transfer Capacitance
C
rss
87
Switching
c
Turn On Time
t
d(on)
13.0
25
Turn-On Time
t
r
V
DD
= -6 V, R
L
= 6 W
I
D
^ -1 0 A V
GEN
= -4 5 V
36.0
60
ns
Turn-Off Time
t
d(off)
I
D
^ -1.0 A, V
GEN
= -4.5 V
R
G
= 6 W
42
70
ns
Turn-Off Time
t
f
34
60
Notes
a.
Pulse test: PW v300 ms duty cycle v2%.
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.
Si2301DS
Vishay Siliconix
Document Number: 70627
S-31990--Rev. E, 13-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
0
2
4
6
8
10
0
1
2
3
4
5
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
= -55_C
125_C
0, 0.5, 1 V
2.5 V
V
GS
= 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
1000
0
3
6
9
12
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
0
1
2
3
4
5
0
2
4
6
8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 6 V
I
D
= 2.8 A
-
On-Resistance (
r DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.8 A
T
J
- Junction Temperature (_C)
(Normalized)
-
On-Resistance (
r DS(on)
W
)
V
GS
= 2.5 V
V
GS
= 4.5 V
25_C
Si2301DS
Vishay Siliconix
www.vishay.com
4
Document Number: 70627
S-31990--Rev. E, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.10
1.00
10.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Power (W)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
0
50
100
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
30
-
On-Resistance (
r DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I S
T
J
- Temperature (_C)
Time (sec)
V
ariance (V)
V
GS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
I
D
= 2.8 A
I
D
= 250 mA
10
1
10
T
C
= 25_C
Single Pulse
14
12
8
4
0
T
J
= 25_C
T
J
= 150_C
2
6
10
PDF 
ZIP