SBL10xx, SBLF10xx & SBLB10xx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88725
www.vishay.com
01-Jul-02
1
Schottky Barrier Rectifier
Reverse Voltage 30 and 40V
Forward Current 10A
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
Dimensions in inches
and (millimeters)
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2
K - HEATSINK
0-0.01 (0-0.254)
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
1
2
PIN
DIA.
DIA.
PIN 1
PIN 2
0.676 (17.2)
0.646 (16.4)
ITO-220AC (SBLF10xx)
TO-220AC (SBL10xx)
TO-263AB (SBLB10xx)
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
PIN 1
PIN 2
CASE
0.370 (9.40)
0.360 (9.14)
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Features
· Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
· Dual rectifier construction, positive center tap
· Metal silicon junction, majority carrier conduction
· Low power loss, high efficiency
· Guardring for overvoltage protection
· For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
· High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
SBL10xx, SBLF10xx & SBLB10xx Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88725
2
01-Jul-02
Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
SBL1030
SBL1040
Unit
Maximum repetitive peak reverse voltage
V
RRM
30
40
V
Working peak reverse voltage
V
RWM
21
28
V
Maximum DC blocking voltage
V
DC
30
40
V
Maximum average forward rectified current
at TC = 110 °C
I
F(AV)
10
A
Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
250
A
on rated load (JEDEC Method)
Operating junction and storage temperature range
T
J
, T
STG
40 to +125
°C
RMS Isolation voltage (SBLF type only) from terminals
4500
(NOTE 1)
to heatsink with t = 1 second, RH
30%
V
ISOL
3500
(NOTE 2)
V
1500
(NOTE 3)
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage
V
F
0.60
V
at 10A
(Note 4)
Maximum instantaneous reverse current T
C
= 25°C
1.0
at DC blocking voltage
(Note 4)
T
C
= 100°C
I
R
50
mA
Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
SBL
SBLF
SBLB
Unit
Typical thermal resistance from junction to case per leg
R
JC
2.0
5.0
2.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19")
(4) Pulse test: 300
µ
s pulse width, 1% duty cycle
SBL10xx, SBLF10xx & SBLB10xx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88725
www.vishay.com
01-Jul-02
3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
I
F
--
Instantaneous Forward Current (A)
100
10
I
R
--
Instantaneous Reverse Current
Typical Reverse Characteristics
1.0
0.1
0.01
Forward Current Derating Curve
0
2.5
5
7.5
12.5
0
50
100
150
10
A
verage Forward Current (A)
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
Maximum Non-Repetitive Peak
Forward Surge Current
0
50
150
100
250
200
300
1
10
100
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Case Temperature (
°
C)
1.0
10
50
0.01
0.001
0.1
T
J
= 125
°
C
75
°
C
25
°
C
Resistive or Inductive Load
T
ransient
Thermal Impedance (
¡
C/W)
0.01
1
10
100
10
100
0.1
0.1
1
t -- Pulse Duration (sec.)
T
J
= 25
°
C
T
J
= 125
°
C
Typical Junction Capacitance
pF
--
Junction Capacitance
1
10
100
1,000
4,000
100
0.1
Reverse Voltage (V)
T
J
= 25
°
C
f = 1.0 MH
Z
V
sig
= 50mVp-p
Instantaneous Forward Voltage (V)
0
0.2
0.6
1.2
0.4
0.8
1.0
Pulse Width = 300
µ
s
1% Duty Cycle
0
20
100
40
60
80
Typical Transient
Thermal Impedance
Percent of Rated Peak Reverse Voltage (%)
Typical Instantaneous
Forward Characteristics
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