ChipFind - Datasheet

Part Number P4KE

Download:  PDF   ZIP
Extended
Voltage Range
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
Dimensions in inches
and (millimeters)
DO-204AL (DO-41 Plastic)
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440
(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Peak power dissipation with a 10/1000
µ
s waveform
(1)
(Fig. 1)
P
PPM
400
W
Peak pulse current wih a 10/1000
µ
s waveform
(1)
I
PPM
See Next Table
A
Steady state power dissipation
P
M(AV)
1.0
W
at T
L
= 75
°
C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms
I
FSM
40
A
single half sine-wave unidirectional only
(3)
Maximum instantaneous forward voltage
V
F
3.5/5.0
V
at 25A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
R
JL
60
°C/W
Typ. thermal resistance junction-to-ambient, L
Lead
= 10mm
R
JA
100
°C/W
Operating junction and storage temperature range
T
J
, T
STG
­55 to +175
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) V
F
= 3.5V for P4KE220(A) & below; V
F
= 5.0V for P4KE250(A) & above
V
(BR)
Unidirectional 6.8 to 540V
V
(BR)
Bidirectional 6.8 to 440V
Peak Pulse Power 400W
Features
· Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
· Glass passivated junction
· 400W peak pulse power capabililty on 10/1000
µ
s wave-
form, repetition rate (duty cycle): 0.01%
· Excellent clamping capability
· Low incremental surge resistance
· Very fast response time
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
passivated junction
Terminals: Axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265
°
C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity: For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position: Any Weight: 0.012 oz., 0.3 g
Packaging Codes ­ Options (Antistatic):
51 ­ 1K per Bulk box, 10K/carton
54 ­ 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 ­ 3K per horiz. tape & Ammo box, 30K/carton
T
RANS
Z
ORB
®
Transient Voltage Suppressors
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88365
www.vishay.com
09-Oct-02
1
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum
Breakdown Voltage
Reverse
Maximum
Maximum
Maximum
V
(BR)
at I
T
(1)
Test
Stand-off
Leakage
Peak Pulse
Clamping
Temperature
(V)
Current
Voltage
at V
WM
Current
Voltage at
Coefficient
I
T
V
WM
I
D
(3)
I
PPM
(2)
I
PPM
of V
(BR)
Device Type
MIN
MAX
(mA)
(V)
(
µ
A)
(A)
V
C
(V)
(% / °C)
P4KE6.8
6.12
7.48
10
5.50
1000
37.0
10.8
0.057
P4KE6.8A
6.45
7.14
10
5.80
1000
38.1
10.5
0.057
P4KE7.5
6.75
8.25
10
6.05
500
34.2
11.7
0.061
P4KE7.5A
7.13
7.88
10
6.40
500
35.4
11.3
0.061
P4KE8.2
7.38
9.02
10
6.63
200
32.0
12.5
0.065
P4KE8.2A
7.79
8.61
10
7.02
200
33.1
12.1
0.06
P4KE9.1
8.19
10.0
1.0
7.37
50
29.0
13.8
0.068
P4KE9.1A
8.65
9.55
1.0
7.78
50
29.9
13.4
0.068
P4KE10
9.00
11.0
1.0
8.10
10
26.7
15.0
0.073
P4KE10A
9.50
10.5
1.0
8.55
10
27.6
14.5
0.073
P4KE11
9.90
12.1
1.0
8.92
5.0
24.7
16.2
0.075
P4KE11A
10.5
11.6
1.0
9.40
5.0
25.6
15.6
0.075
P4KE12
10.8
13.2
1.0
9.72
1.0
23.1
17.3
0.076
P4KE12A
11.4
12.6
1.0
10.2
1.0
24.0
16.7
0.078
P4KE13
11.7
14.3
1.0
10.5
1.0
21.1
19.0
0.081
P4KE13A
12.4
13.7
1.0
11.1
1.0
22.0
18.2
0.081
P4KE15
13.5
16.5
1.0
12.1
1.0
18.2
22.0
0.084
P4KE15A
14.3
15.8
1.0
12.8
1.0
18.9
21.2
0.084
P4KE16
14.4
17.6
1.0
12.9
1.0
17.0
23.5
0.086
P4KE16A
15.2
16.8
1.0
13.6
1.0
17.8
22.5
0.086
P4KE18
16.2
19.8
1.0
14.5
1.0
15.1
26.5
0.088
P4KE18A
17.1
18.9
1.0
15.3
1.0
15.9
25.2
0.088
P4KE20
18.0
22.0
1.0
16.2
1.0
13.7
29.1
0.090
P4KE20A
19.0
21.0
1.0
17.1
1.0
14.4
27.7
0.090
P4KE22
19.8
24.2
1.0
17.8
1.0
12.5
31.9
0.092
P4KE22A
20.9
23.1
1.0
18.8
1.0
13.1
30.6
0.092
P4KE24
21.6
26.4
1.0
19.4
1.0
11.5
34.7
0.094
P4KE24A
22.8
25.2
1.0
20.5
1.0
12.0
33.2
0.094
P4KE27
24.3
29.7
1.0
21.8
1.0
10.2
39.1
0.096
P4KE27A
25.7
28.4
1.0
23.1
1.0
10.7
37.5
0.096
P4KE30
27.0
33.0
1.0
24.3
1.0
9.2
43.5
0.097
P4KE30A
28.5
31.5
1.0
25.6
1.0
9.7
41.4
0.097
P4KE33
29.7
36.3
1.0
26.8
1.0
8.4
47.7
0.098
P4KE33A
31.4
34.7
1.0
28.2
1.0
8.8
45.7
0.098
P4KE36
32.4
39.6
1.0
29.1
1.0
7.7
52.0
0.099
P4KE36A
34.2
37.8
1.0
30.8
1.0
8.0
49.9
0.099
P4KE39
35.1
42.9
1.0
31.6
1.0
7.1
56.4
0.100
P4KE39A
37.1
41.0
1.0
33.3
1.0
7.4
53.9
0.100
P4KE43
38.7
47.3
1.0
34.8
1.0
6.5
61.9
0.101
P4KE43A
40.9
45.2
1.0
36.8
1.0
6.7
59.3
0.101
P4KE47
42.3
51.7
1.0
38.1
1.0
5.9
67.8
0.101
P4KE47A
44.7
49.4
1.0
40.2
1.0
6.2
64.8
0.101
P4KE51
45.9
56.1
1.0
41.3
1.0
5.4
73.5
0.102
P4KE51A
48.5
53.6
1.0
43.6
1.0
5.7
70.1
0.102
P4KE56
50.4
61.6
1.0
45.4
1.0
5.0
80.5
0.103
P4KE56A
53.2
58.8
1.0
47.8
1.0
5.2
77.0
0.103
P4KE62
55.8
68.2
1.0
50.2
1.0
4.5
89.0
0.104
P4KE62A
58.9
65.1
1.0
53.0
1.0
4.7
85.0
0.104
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88365
2
09-Oct-02
Document Number 88365
www.vishay.com
09-Oct-02
3
Electrical Characteristics
(Con't.)
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum
Breakdown Voltage
Reverse
Maximum
Maximum
Maximum
V
(BR)
at I
T
(1)
Test
Stand-off
Leakage
Peak Pulse
Clamping
Temperature
(V)
Current
Voltage
at V
WM
Current
Voltage at
Coefficient
I
T
V
WM
I
D
(3)
I
PPM
(2)
I
PPM
of V
(BR)
Device Type
MIN
MAX
(mA)
(V)
(
µ
A)
(A)
V
C
(V)
(% / °C)
P4KE68
61.2
74.8
1.0
55.1
1.0
4.1
98.0
0.104
P4KE68A
64.6
71.4
1.0
58.1
1.0
4.3
92.0
0.104
P4KE75
67.5
82.5
1.0
60.7
1.0
3.7
108
0.105
P4KE75A
71.3
78.8
1.0
64.1
1.0
3.9
103
0.105
P4KE82
73.8
90.2
1.0
66.4
1.0
3.4
118
0.105
P4KE82A
77.9
86.1
1.0
70.1
1.0
3.5
113
0.105
P4KE91
81.9
100
1.0
73.7
1.0
3.1
131
0.106
P4KE91A
86.5
95.5
1.0
77.8
1.0
3.2
125
0.106
P4KE100
90.0
110
1.0
81.0
1.0
2.8
144
0.106
P4KE100A
95.0
105
1.0
85.5
1.0
2.9
137
0.106
P4KE110
99.0
121
1.0
89.2
1.0
2.5
158
0.107
P4KE110A
105
116
1.0
94.0
1.0
2.6
152
0.107
P4KE120
108
132
1.0
97.2
1.0
2.3
173
0.107
P4KE120A
114
126
1.0
102
1.0
2.4
165
0.107
P4KE130
117
143
1.0
105
1.0
2.1
187
0.107
P4KE130A
124
137
1.0
111
1.0
2.2
179
0.107
P4KE150
135
165
1.0
121
1.0
1.9
215
0.108
P4KE150A
143
158
1.0
128
1.0
1.9
207
0.108
P4KE160
144
176
1.0
130
1.0
1.7
230
0.108
P4KE160A
152
168
1.0
136
1.0
1.8
219
0.108
P4KE170
153
187
1.0
138
1.0
1.6
244
0.108
P4KE170A
162
179
1.0
145
1.0
1.7
234
0.108
P4KE180
162
198
1.0
146
1.0
1.6
258
0.108
P4KE180A
171
189
1.0
154
1.0
1.6
246
0.108
P4KE200
180
220
1.0
162
1.0
1.4
287
0.108
P4KE200A
190
210
1.0
171
1.0
1.5
274
0.108
P4KE220
198
242
1.0
175
1.0
1.2
344
0.108
P4KE220A
209
231
1.0
185
1.0
1.2
328
0.108
P4KE250
225
275
1.0
202
1.0
1.1
360
0.110
P4KE250A
237
263
1.0
214
1.0
1.2
344
0.110
P4KE300
270
330
1.0
243
1.0
0.93
430
0.110
P4KE300A
285
315
1.0
256
1.0
1.0
414
0.110
P4KE350
315
385
1.0
284
1.0
0.79
504
0.110
P4KE350A
333
368
1.0
300
1.0
0.83
482
0.110
P4KE400
360
440
1.0
324
1.0
0.70
574
0.110
P4KE400A
380
420
1.0
342
1.0
0.73
548
0.110
P4KE440
396
484
1.0
356
1.0
0.63
631
0.110
P4KE440A
418
462
1.0
376
1.0
0.66
602
0.110
P4KE480
432
528
1.0
389
1.0
0.58
686
0.110
P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
P4KE510
459
561
1.0
413
1.0
0.55
729
0.110
P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
P4KE540
486
594
1.0
437
1.0
0.52
772
0.110
P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
Notes:
(1) Pulse test: t
p
50ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) For bidirectional types having V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage, %
T
A
-- Ambient Temperature (
°
C)
1
5
10
50
100
Fig. 2 ­ Pulse Derating Curve
I
FSM
-
-
Peak Forward
Surge Current (A)
Number of Cycles at 60 Hz
C
J
-
-
Junction Capacitance
10
100
1,000
10,000
1.0
10
100
200
V
(BR)
-- Breakdown Voltage (V)
10
50
100
200
Fig. 4 ­ Typ. Junction Capacitance Uni-Directional
0.1
µ
s
1.0
µ
s
10
µ
s
100
µ
s
1.0ms
10ms
P
PPM
--
Peak Pulse Power (kW)
100
10
1
0.1
td -- Pulse Width (sec.)
Fig. 5 ­ Steady State Power Derating Curve
0
75
25
100
125
150
175
200
50
0
0.25
0.50
0.75
1.00
PM
(A
V)
, Steady State Power
Dissipation (W)
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
T
L
-- Lead Temperature (
°
C)
Fig. 7 ­ Typical Reverse Leakage Characteristics
I
D
--
Instantaneous Reverse
Leakage Current (
µ
A)
0.01
0.1
1
10
100
0
100
200
V
(BR)
-- Breakdown Voltage (V)
300
400
500
600
60 HZ Resistive or
Inductive Load
L = 0.375" (9.5mm)
Lead Lengths
Fig. 1 ­ Peak Pulse Power Rating Curve
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25
°
C
Measured at
Stand-Off
Voltage, V
WM
Measured at Zero Bias
T
J
= 25
°
C
f = 1.0MHz
Vsig = 50mVp-p
T
ransient Thermal
Impedance
(
°
C/W)
10
100
1
0.001
t
p
-- Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Fig. 8 ­ Typ. Transient Thermal Impedance
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
td
Fig. 3 -- Pulse Waveform
T
J
= 25
°
C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
0
1.0
2.0
3.0
4.0
t -- Time (ms)
0
50
100
150
I
PPM
--
Peak Pulse Current,
% I
RSM
tr = 10
µ
sec.
Half Value -- I
PPM
2
10/1000
µ
sec. Waveform
as defined by R.E.A.
Peak Value
I
PPM
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25
°
C
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88365
4
09-Oct-02