CNY17 Series
Vishay Telefunken
Rev. A3, 11Jan99
108
Optocoupler with Phototransistor Output
Description
The CNY17 series consists of a phototransistor opti-
cally coupled to a gallium arsenide infrared-emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I IV at mains voltage
300 V
D
For appl. class I III at mains voltage
600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microproces-
sor system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65 Safety for mains-operated electronic and
related household apparatus
14827
6
5
4
2
3
1
C
E
A (+) C ()
n.c.
95 10805
B
Order Instruction
Ordering Code
CTR Ranking
Remarks
CNY171/ CNY17G1
1)
40 to 80%
CNY172/ CNY17G2
1)
63 to 125%
CNY173/ CNY17G3
1)
100 to 200%
CNY174/ CNY17G4
1)
160 to 320%
1)
G = Leadform 10.16 mm; G is not market on the body
CNY17 Series
Vishay Telefunken
Rev. A3, 11Jan99
109
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage
(transient overvoltage) V
IOTM
= 6 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation
0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
D
CTR offered in 4 groups
D
Low temperature coefficient of CTR
D
Coupling System A
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
3
A
Power dissipation
T
amb
25
°
C
P
V
100
mW
Junction temperature
T
j
125
°
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
32
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
°
C
P
V
150
mW
Junction temperature
T
j
125
°
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
V
IO
3.75
kV
Total power dissipation
T
amb
25
°
C
P
tot
250
mW
Ambient temperature range
T
amb
55 to +100
°
C
Storage temperature range
T
stg
55 to +125
°
C
Soldering temperature
2 mm from case, t
10 s
T
sd
260
°
C
CNY17 Series
Vishay Telefunken
Rev. A3, 11Jan99
110
Electrical Characteristics
(T
amb
= 25
°
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
32
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector emitter cut-off
current
V
CE
= 10 V, I
f
= 0
I
CEO
10
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
AC isolation test voltage
(RMS)
f = 50 Hz, t = 1 s
V
IO
3.75
V
Collector emitter
saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f
c
110
kHz
Coupling capacitance
f = 1 MHz
c
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
CNY17(G)-1
CTR
0.4
0.8
C F
CE
F
CNY17(G)-2
CTR
0.63
1.25
CNY17(G)-3
CTR
1.0
2.0
CNY17(G)-4
CTR
1.6
3.2
V
CE
= 5 V, I
F
= 1 mA
CNY17(G)-1
CTR
0.13
CE
F
CNY17(G)-2
CTR
0.22
CNY17(G)-3
CTR
0.34
CNY17(G)-4
CTR
0.56
CNY17 Series
Vishay Telefunken
Rev. A3, 11Jan99
111
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I
si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T
amb
25
°
C
P
si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V
IOTM
6
kV
Safety temperature
T
si
150
°
C
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage
Routine test
100%, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage t
Tr
= 60 s, t
test
= 10 s,
V
IOTM
6
kV
g
g
Lot test (sample test)
Tr
test
(see figure 2)
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100
°
C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 150
°
C
(construction test only)
R
IO
10
9
W
0
25
50
75
125
0
50
100
150
200
300
P
T
otal Power Dissipation ( mW
)
tot
T
si
Safety Temperature (
°
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
V
IOTM
V
Pd
V
IOWM
V
IORM
V
t
4
t
3
t
test
t
stres
t
2
t
1
t
0
13930
t
Tr
= 60 s
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
CNY17 Series
Vishay Telefunken
Rev. A3, 11Jan99
112
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
W
(see figure 3)
t
d
4.0
m
s
Rise time
S
C
L
(
g
)
t
r
7.0
m
s
Fall time
t
f
6.7
m
s
Storage time
t
s
0.3
m
s
Turn-on time
t
on
11.0
m
s
Turn-off time
t
off
7.0
m
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 4)
t
on
25
m
s
Turn-off time
S
F
L
(
g
)
t
off
42.5
m
s
0
95 10900
I
F
I
F
+ 5 V
I
C
= 5 mA; Adjusted trough
input amplitude
Channel I
Channel II
Oscilloscope
R
L
1 M
W
C
L
20 pF
100
W
50
W
R
G
= 50
W
t
p
= 50 ms
t
p
T +
0.01
Figure 3. Test circuit, non-saturated operation
+ 5 V
I
F
= 10 mA
I
F
0
95 10843
R
G
= 50
W
t
p
= 50
ms
t
p
T +
0.01
1 k
W
50
W
I
C
Channel I
Channel II
Oscilloscope
R
L
1 M
W
C
L
20 pF
Figure 4. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse dura-
tion
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 5. Switching times
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