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Document Number 85604
Silicon Epitaxial Planar ZDiodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Low noise
D
Very high stability
D
Available with tighter tolerances
D
V
Z
tolerance
±
2%
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
l=4mm, T
L
=25
°
C
P
V
500
mW
Zcurrent
I
Z
P
V
/V
Z
mA
Junction temperature
T
j
175
°
C
Storage temperature range
T
stg
65...+175
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, T
L
=constant
R
thJA
300
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=100mA
V
F
1.5
V
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Document Number 85604
Type
V
Znom
I
ZT
for V
ZT
and r
zjT
r
zjk
at I
ZK
I
R
and I
R
at V
R
TK
VZ
BZX55B...
V
mA
V
W
W
mA
m
A
m
A
2)
V
%/K
2V7
2.7
5
2.64 to 2.76
< 85
< 600
1
< 10
< 50
1
0.09 to 0.06
3V0
3.0
5
2.94 to 3.06
< 90
< 600
1
< 4
< 40
1
0.08 to 0.05
3V3
3.3
5
3.24 to 3.36
< 90
< 600
1
< 2
< 40
1
0.08 to 0.05
3V6
3.6
5
3.52 to 3.68
< 90
< 600
1
< 2
< 40
1
0.08 to 0.05
3V9
3.9
5
3.82 to 3.98
< 90
< 600
1
< 2
< 40
1
0.08 to 0.05
4V3
4.3
5
4.22 to 4.38
< 90
< 600
1
< 1
< 20
1
0.06 to 0.03
4V7
4.7
5
4.60 to 4.80
< 80
< 600
1
< 0.5
< 10
1
0.05 to +0.02
5V1
5.1
5
5.00 to 5.20
< 60
< 550
1
< 0.1
< 2
1
0.02 to +0.02
5V6
5.6
5
5.48 to 5.72
< 40
< 450
1
< 0.1
< 2
1
0.05 to +0.05
6V2
6.2
5
6.08 to 6.32
< 10
< 200
1
< 0.1
< 2
2
0.03 to 0.06
6V8
6.8
5
6.66 to 6.94
< 8
< 150
1
< 0.1
< 2
3
0.03 to 0.07
7V5
7.5
5
7.35 to 7.65
< 7
< 50
1
< 0.1
< 2
5
0.03 to 0.07
8V2
8.2
5
8.04 to 8.36
< 7
< 50
1
< 0.1
< 2
6.2
0.03 to 0.08
9V1
9.1
5
8.92 to 9.28
< 10
< 50
1
< 0.1
< 2
6.8
0.03 to 0.09
10
10
5
9.80 to 10.20
< 15
< 70
1
< 0.1
< 2
7.5
0.03 to 0.1
11
11
5
10.78 to 11.22
< 20
< 70
1
< 0.1
< 2
8.2
0.03 to 0.11
12
12
5
11.76 to 12.24
< 20
< 90
1
< 0.1
< 2
9.1
0.03 to 0.11
13
13
5
12.74 to 13.26
< 26
< 110
1
< 0.1
< 2
10
0.03 to 0.11
15
15
5
14.70 to 15.30
< 30
< 110
1
< 0.1
< 2
11
0.03 to 0.11
16
16
5
15.70 to 16.30
< 40
< 170
1
< 0.1
< 2
12
0.03 to 0.11
18
18
5
17.64 to 18.36
< 50
< 170
1
< 0.1
< 2
13
0.03 to 0.11
20
20
5
19.60 to 20.40
< 55
< 220
1
< 0.1
< 2
15
0.03 to 0.11
22
22
5
21.55 to 22.45
< 55
< 220
1
< 0.1
< 2
16
0.04 to 0.12
24
24
5
23.5 to 24.5
< 80
< 220
1
< 0.1
< 2
18
0.04 to 0,12
27
27
5
26.4 to 27.6
< 80
< 220
1
< 0.1
< 2
20
0.04 to 0.12
30
30
5
29.4 to 30.6
< 80
< 220
1
< 0.1
< 2
22
0.04 to 0.12
33
33
5
32.4 to 33.6
< 80
< 220
1
< 0.1
< 2
24
0.04 to 0.12
36
36
5
35.3 to 36.7
< 80
< 220
1
< 0.1
< 2
27
0.04 to 0.12
39
39
2.5
38.2 to 39.8
< 90
< 500
0.5
< 0.1
< 5
30
0.04 to 0.12
43
43
2.5
42.1 to 43.9
< 90
< 600
0.5
< 0.1
< 5
33
0.04 to 0.12
47
47
2.5
46.1 to 47.9
< 110
< 700
0.5
< 0.1
< 5
36
0.04 to 0.12
51
51
2.5
50.0 to 52.0
< 125
< 700
0.5
< 0.1
< 10
39
0.04 to 0.12
56
56
2.5
54.9 to 57.1
< 135
< 1000
0.5
< 0.1
< 10
43
0.04 to 0.12
62
62
2.5
60.8 to 63.2
< 150
< 1000
0.5
< 0.1
< 10
47
0.04 to 0.12
68
68
2.5
66.6 to 69.4
< 200
< 1000
0.5
< 0.1
< 10
51
0.04 to 0.12
75
75
2.5
73.5 to 76.5
< 250
< 1500
0.5
< 0.1
< 10
56
0.04 to 0.12
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Document Number 85604
Characteristics (T
j
= 25
_
C unless otherwise specified)
95 9611
0
5
10
15
0
100
200
300
400
500
20
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
l
l
T
L
=constant
Figure 1. Thermal Resistance vs. Lead Length
0
40
80
120
160
0
100
300
400
500
600
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
°
C )
200
95 9602
200
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
V
V
oltage
Change
(
mV
)
Z
V
Z
Z-Voltage ( V )
25
95 9598
D
I
Z
=5mA
T
j
= 25
°
C
Figure 3. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Relative
V
oltage
Change
Ztn
T
j
Junction Temperature (
°
C )
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25
°
C)
TK
VZ
=10
10
4
/K
8
10
4
/K
4
10
4
/K
6
10
4
/K
4
10
4
/K
2
10
4
/K
2
10
4
/K
0
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
0
10
20
30
5
0
5
10
15
TK
T
emperature
Coef
ficient of
V
( 10 /K
)
VZ
V
Z
Z-Voltage ( V )
50
95 9600
40
Z
4
I
Z
=5mA
Figure 5. Temperature Coefficient of Vz vs. ZVoltage
0
5
10
15
0
50
100
150
200
C Diode Capacitance ( pF )
D
V
Z
Z-Voltage ( V )
25
95 9601
20
T
j
= 25
°
C
V
R
= 2V
Figure 6. Diode Capacitance vs. ZVoltage
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Document Number 85604
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I Forward Current ( mA
)
F
V
F
Forward Voltage ( V )
T
j
= 25
°
C
Figure 7. Forward Current vs. Forward Voltage
0
4
8
12
16
20
95 9604
0
20
40
60
80
100
I Z-Current ( mA
)
Z
V
Z
Z-Voltage ( V )
P
tot
=500mW
T
amb
=25
°
C
Figure 8. ZCurrent vs. ZVoltage
15
20
25
30
0
10
20
30
40
50
I Z-Current ( mA
)
Z
V
Z
Z-Voltage ( V )
35
95 9607
P
tot
=500mW
T
amb
=25
°
C
Figure 9. ZCurrent vs. ZVoltage
0
5
10
15
20
1
10
100
1000
r Dif
ferential Z-Resistance ( )
Z
V
Z
Z-Voltage ( V )
25
95 9606
W
T
j
= 25
°
C
I
Z
=1mA
5mA
10mA
Figure 10. Differential ZResistance vs. ZVoltage
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( ms )
95 9603
10
1
10
0
10
1
10
2
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
Single Pulse
R
thJA
=300K/W
DT=T
jmax
T
amb
i
ZM
=(V
Z
+(V
Z
2
+4r
zj
DT/Z
thp
)
1/2
)/(2r
zj
)
Figure 11. Thermal Response
BZX55B...
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Document Number 85604
Dimensions in mm
Cathode Identification
1.7 max.
0.55 max.
3.9 max.
26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
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