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Part Number BYS10-x5

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Vishay General Semiconductor
BYS10-25 thru BYS10-45
Document Number 86013
06-Jul-06
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
· Low profile package
· Ideal for automated placement
· Guardring for overvoltage protection
· Low power losses, high efficiency
· Very low switching losses
· High surge capability
· Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
· Solder Dip 260 °C, 40 seconds
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
25 V to 45 V
I
FSM
40 A
V
F
0.50 V
T
j
max.
150 °C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYS10-25
BYS10-35
BYS10-45
UNIT
Device marking code
BYS 025
BYS 035
BYS 045
Maximum repetitive peak reverse voltage
V
RRM
25
35
45
V
Maximum average forward rectified current
I
F(AV)
1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
at 8.3 ms
at 10 ms
I
FSM
40
30
A
Junction and storage temperature range
T
J
, T
STG
- 65 to + 150
°C
www.vishay.com
2
Document Number 86013
06-Jul-06
Vishay General Semiconductor
BYS10-25 thru BYS10-45
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm
2
35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 µm Cu
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS
SYMBOL
BYS10-25
BYS10-35
BYS10-45
UNIT
Maximum instantaneous forward voltage
(1)
at 1.0 A
V
F
500
mV
Maximum DC reverse current
(1)
at V
RRM
T
j
= 25 °C
T
j
= 100 °C
I
R
500
10
µA
mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYS10-25
BYS10-35
BYS10-45
UNIT
Maximum Thermal Resistance - Junction Lead
R
JL
25
°C/W
Maximum Thermal Resistance - Junction Ambient
R
JA
150
(1)
125
(2)
100
(3)
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYS10-45-E3/TR
0.064
TR
1800
7" Diameter Plastic Tape & Reel
BYS10-45-E3/TR3
0.064
TR3
7500
13" Diameter Plastic Tape & Reel
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
80
40
0
120
160
0
1
2
3
4
7
200
5
6
BYS10-25
BYS10-35
BYS10-45
R
thJA
= 25 K/W
R
thJA
= 100 K/W
Junction Temperature (°C)
P
R
- Max.
Re
v
erse P
o
w
er Dissipation (
W
)
Figure 2. Max. Reverse Current vs. Junction Temperature
80
40
0
120
160
0.1
1
10
100
1000
200
V
R
= V
RRM
Junction Temperature (°C)
Re
v
erse C
u
rrent (mA)
Document Number 86013
06-Jul-06
www.vishay.com
3
BYS10-25 thru BYS10-45
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Average Forward Current vs. Ambient Temperature
0
0
0.4
0.8
1.2
1.6
2.0
40
80
120
160
200
BYS10-25
BYS10-35
BYS10-45
Ambient Temperature (°C)
A
v
er
age F
o
r
w
ard C
u
rrent (
A)
V
R
= V
RRM
, Half Sine-Wave, R
thJA
= 25 K/W
0
0
0.4
0.8
1.2
1.6
2.0
40
80
120
160
200
100 K/W
125 K/W
150 K/W
Ambient Temperature (°C)
A
v
er
age F
o
r
w
ard C
u
rrent (
A)
V
R
= 0 V, Half Sine-Wave
R
thJA
= 25 K/W
Figure 5. Max. Forward Current vs. Forward Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
T
j
= 150 °C
T
j
= 25 °C
Forward Voltage (V)
Fo
r
w
ard C
u
rrent (A)
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
T
r
ansient Ther
mal Impedance (°C/
W
)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.