BPW34
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81521
Silicon PIN Photodiode
Description
The BPW34 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO5 devices in many applications.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation. The large active area
combined with a flat case gives a high sensitivity at a
wide viewing angle.
Features
D
Large radiant sensitive area (A=7.5 mm
2
)
D
Wide angle of half sensitivity
=
±
65
°
D
High photo sensitivity
D
Fast response times
D
Small junction capacitance
D
Suitable for visible and near infrared radiation
94 8583
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
60
V
Power Dissipation
T
amb
x
25
°
C
P
V
215
mW
Junction Temperature
T
j
100
°
C
Storage Temperature Range
T
stg
55...+100
°
C
Soldering Temperature
t
x
3 s
T
sd
260
°
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
BPW34
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
·
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Document Number 81521
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
I
R
= 100
m
A, E = 0
V
(BR)
60
V
Reverse Dark Current
V
R
= 10 V, E = 0
I
ro
2
30
nA
Diode Capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
D
70
pF
V
R
= 3 V, f = 1 MHz, E = 0
C
D
25
40
pF
Open Circuit Voltage
E
e
= 1 mW/cm
2
,
l
= 950 nm
V
o
350
mV
Temp. Coefficient of V
o
E
e
= 1 mW/cm
2
,
l
= 950 nm
TK
Vo
2.6
mV/K
Short Circuit Current
E
A
= 1 klx
I
k
70
m
A
E
e
= 1 mW/cm
2
,
l
= 950 nm
I
k
47
m
A
Temp. Coefficient of I
k
E
e
= 1 mW/cm
2
,
l
= 950 nm
TK
Ik
0.1
%/K
Reverse Light Current
E
A
= 1 klx, V
R
= 5 V
I
ra
75
m
A
g
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
I
ra
40
50
m
A
Angle of Half Sensitivity
±
65
deg
Wavelength of Peak Sensitivity
l
p
900
nm
Range of Spectral Bandwidth
l
0.5
600...1050
nm
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
NEP
4x10
14
W/
Hz
Rise Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
t
r
100
ns
Fall Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
t
f
100
ns
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
20
40
60
80
1
10
100
1000
I Reverse Dark Current ( nA
)
ro
T
amb
Ambient Temperature (
°
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
I Relative Reverse Light Current
ra rel
T
amb
Ambient Temperature (
°
C )
100
94 8416
V
R
=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
BPW34
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81521
0.01
0.1
1
0.1
1
10
100
1000
I Reverse Light Current (
A
)
ra
E
e
Irradiance ( mW / cm
2
)
10
94 8417
m
V
R
=5V
l=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
100
1000
E
A
Illuminance ( lx )
94 8418
I Reverse Light Current (
A
)
ra
m
10
1
10
2
10
3
10
4
V
R
=5V
Figure 4. Reverse Light Current vs. Illuminance
0.1
1
10
1
10
100
V
R
Reverse Voltage ( V )
100
94 8419
I Reverse Light Current (
A
)
ra
m
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
l=950nm
Figure 5. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 6. Diode Capacitance vs. Reverse Voltage
350
550
750
950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
S ( ) Relative Spectral Sensitivity
rel
l Wavelength ( nm )
l
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S Relative Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
BPW34
Vishay Telefunken
5 (5)
Rev. 2, 20-May-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81521
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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