BPW20RF
Document Number 81570
Rev. 1.3, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
94 8482
Silicon PN Photodiode
Description
BPW20RF is a planar Silicon PN photodiode in a her-
metically sealed short TO-5 case, especially
designed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of
illumination level.
On the other hand, there is a strictly logarithmic corre-
lation between open circuit voltage and illumination
over the same range.
Equipped with a clear, flat glass window, the spectral
responsitivity reaches from blue to near infrared.
Features
· Hermetically sealed TO-5 case
· Flat glass window
· Cathode connected to case
· Wide viewing angle
= ± 50 °
· Large radiant sensitive area (A = 7.5 mm
2
)
· Suitable for visible and near infrared radiation
· High sensitivity
· UV enhanced
· Low dark current
· High shunt resistance
· Excellent linearity
· For photodiode and photovoltaic cell operation
· Lead-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Sensor for light measuring techniques in cameras,
photometers, color analyzers, exposure meters (e.g.
solariums) and other medical and industrial measur-
ing and control applications.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V
R
10
V
Power Dissipation
T
amb
50 °C
P
V
300
mW
Junction Temperature
T
j
125
°C
Operating Temperature Range
T
amb
- 55 to + 125
°C
Storage Temperature Range
T
stg
- 55 to + 125
°C
Soldering Temperature
t
5 s
T
sd
260
°C
Thermal Resistance Junction/
Ambient
R
thJA
250
K/W
www.vishay.com
2
Document Number 81570
Rev. 1.3, 08-Mar-05
BPW20RF
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
I
F
= 50 mA
V
F
1.0
1.3
V
Breakdown Voltage
I
R
= 20
µA, E = 0
V
(BR)
10
V
Reverse Dark Current
V
R
= 5 V, E = 0
I
ro
2
30
nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
D
1.2
nF
V
R
= 5 V, f = 1 MHz, E = 0
C
D
400
pF
Dark Resistance
V
R
= 10 mV
R
D
38
G
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Open Circuit Voltage
E
A
= 1 klx
V
o
330
500
mV
Temp. Coefficient of V
o
E
A
= 1 klx
TK
Vo
- 2
mV/K
Short Circuit Current
E
A
= 1 klx
I
k
20
60
µA
Temp. Coefficient of I
k
E
A
= 1 klx
TK
Ik
0.1
%/K
Reverse Light Current
E
A
= 1 klx, V
R
= 5 V
I
ra
20
60
µA
E
e
= 1 mW/cm
2
,
= 950 nm,
V
R
= 5 V
I
ra
42
µA
Angle of Half Sensitivity
± 50
deg
Wavelength of Peak Sensitivity
p
920
nm
Range of Spectral Bandwidth
0.5
550 to
1040
nm
Rise Time
V
R
= 0 V, R
L
= 1 k
, = 820 nm
t
r
3.4
µs
Fall Time
V
R
= 0 V, R
L
= 1 k
, = 820 nm
t
f
3.7
µs
Figure 1. Reverse Dark Current vs. Ambient Temperature
40
60
80
120
100
20
I
-
Reverse
Dark
Current
(
n
A
)
ro
94 8468
10
0
10
1
10
2
10
3
10
4
V
R
= 5 V
T
amb
- Ambient Temperature (
°C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
0.8
0.9
1.0
1.1
1.3
1.2
I
-
Relative
Reverse
Light
Current
ra
rel
94 8469
V
R
= 5 V
= 950 nm
T
amb
- Ambient Temperature (
°C )
40
60
80
120
100
20
0
BPW20RF
Document Number 81570
Rev. 1.3, 08-Mar-05
Vishay Semiconductors
www.vishay.com
3
Figure 3. Short Circuit Current vs. Illuminance
Figure 4. Reverse Light Current vs. Irradiance
Figure 5. Reverse Light Current vs. Reverse Voltage
I
-
Short
Circuit
Current
(
µ
A)
k
E
A
- Illuminance ( lx )
10
0
10
-2
10
-1
10
1
10
2
10
3
10
4
10
0
10
-1
10
-2
10
-3
10
-4
10
1
10
2
10
5
18959
10
3
0.1
1
10
100
0.01
0.1
1
I
-
Reverse
Light
Current
(
µ
A)
ra
E
e
- Irradiance ( mW/ cm
2
)
10
94 8471
V
R
= 5 V
= 950 nm
0.1
1
10
1
10
100
V
R
- Reverse Voltage ( V )
100
94 8472
I
-
Reverse
Light
Current
(
µ
A)
ra
= 950 nm
2
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
Figure 6. Diode Capacitance vs. Reverse Voltage
Figure 7. Relative Spectral Sensitivity vs. Wavelength
Figure 8. Relative Radiant Sensitivity vs. Angular Displacement
0
400
600
800
1200
1400
1000
200
0.1
1
10
C
-
Diode
Capacitance
(
p
F
)
D
100
94 8473
E = 0
f = 1 MHz
V
R
- Reverse Voltage ( V )
94 8474
350
550
750
950
0
0.2
0.4
0.6
0.8
1.0
1150
S
(
)
-
Relative
Spectral
Sensitivity
rel
- Wavelength ( nm )
0.4
0.2
0
0.2
0.4
S
-
Relative
Sensitivity
rel
0.6
94 8475
0.6
0.9
0.8
0
°
°
°
30
°
10
20
40
°
50
°
60
°
70
°
80
°
0.7
1.0
BPW20RF
Document Number 81570
Rev. 1.3, 08-Mar-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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