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Part Number BPV23F

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BPV23F(L)
Vishay Telefunken
1 (6)
Rev. 3, 16-Nov-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81510
Silicon PIN Photodiode
Description
BPV23F(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (
l
p
= 950 nm)
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compro-
mising the viewing angle.
In comparison with flat packages the lens package
achieves a sensitivity improvement of 80%.
Features
D
Large radiant sensitive area (A = 5.7 mm
2
)
D
Wide viewing angle
=
±
60
°
D
Improved sensitivity
D
Fast response times
D
Low junction capacitance
D
Plastic package with IR filter
D
Filter designed for 950 nm transmission
D
Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL
94 8633
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU...­ or TSI...­Series).
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
60
V
Power Dissipation
T
amb
x
25
°
C
P
V
215
mW
Junction Temperature
T
j
100
°
C
Operating Temperature Range
T
amb
­55...+100
°
C
Storage Temperature Range
T
stg
­55...+100
°
C
Soldering Temperature
t
x
5 s
T
sd
260
°
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
background image
BPV23F(L)
Vishay Telefunken
2 (6)
Rev. 3, 16-Nov-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81510
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
I
F
= 50 mA
V
F
1
1.3
V
Breakdown Voltage
I
R
= 100
m
A, E = 0
V
(BR)
60
V
Reverse Dark Current
V
R
= 10 V, E = 0
I
ro
2
30
nA
Diode Capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
D
48
pF
Serial Resistance
V
R
= 12 V, f = 1 MHz
R
S
900
W
Open Circuit Voltage
E
e
= 1 mW/cm
2
,
l
= 950 nm
V
o
390
mV
Temp. Coefficient of V
o
E
e
= 1 mW/cm
2
,
l
= 950 nm
TK
Vo
­2.6
mV/K
Short Circuit Current
E
e
= 1 mW/cm
2
,
l
= 950 nm
I
k
60
m
A
Reverse Light Current
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
I
ra
45
63
m
A
Temp. Coefficient of I
ra
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 10 V
TK
Ira
0.2
%/K
Absolute Spectral Sensitivity
V
R
= 5 V,
l
= 870 nm
s(
l
)
0.35
A/W
y
V
R
= 5 V,
l
= 950 nm
s(
l
)
0.6
A/W
Angle of Half Sensitivity
±
60
deg
Wavelength of Peak Sensitivity
l
p
950
nm
Range of Spectral Bandwidth
l
0.5
870...1050
nm
Quantum Efficiency
l
= 950 nm
h
90
%
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
NEP
4x10
­14
W/
Hz
Detectivity
V
R
= 10 V,
l
= 950 nm
D
*
5x10
12
cm
Hz/
W
Rise Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
t
r
70
ns
Fall Time
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
t
f
70
ns
Cut­Off Frequency
V
R
= 12 V, R
L
= 1k
W
,
l
= 870 nm
f
c
4
MHz
V
R
= 12 V, R
L
= 1k
W
,
l
= 950 nm
f
c
1
MHz
background image
BPV23F(L)
Vishay Telefunken
3 (6)
Rev. 3, 16-Nov-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81510
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
20
40
60
80
1
10
100
1000
I ­ Reverse Dark Current ( nA
)
ro
T
amb
­ Ambient Temperature (
°
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
I ­ Relative Reverse Light Current
ra rel
T
amb
­ Ambient Temperature (
°
C )
100
94 8409
V
R
=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
0.01
0.1
1
0.1
1
10
100
1000
I ­ Reverse Light Current (
A
)
ra
E
e
­ Irradiance ( mW / cm
2
)
10
94 8424
m
V
R
=5V
l=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
1
10
100
V
R
­ Reverse Voltage ( V )
100
94 8425
I ­ Reverse Light Current (
A
)
ra
m
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
l=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C ­ Diode Capacitance ( pF )
D
V
R
­ Reverse Voltage ( V )
100
94 8423
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) ­ Relative Spectral Sensitivity
rel
l ­ Wavelength ( nm )
1150
94 8408
1.0
l
Figure 6. Relative Spectral Sensitivity vs. Wavelength
background image
BPV23F(L)
Vishay Telefunken
4 (6)
Rev. 3, 16-Nov-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81510
0.4
0.2
0
0.2
0.4
S ­ Relative Sensitivity
rel
0.6
94 8413
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions BPV23F in mm
95 11475
background image
BPV23F(L)
Vishay Telefunken
5 (6)
Rev. 3, 16-Nov-99
www.vishay.de
·
FaxBack +1-408-970-5600
Document Number 81510
Dimensions BPV23FL in mm
9612205