BF995
Vishay Telefunken
www.vishay.de
·
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (7)
Document Number 85009
NChannel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
13 579
2
1
4
3
94 9279
BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
±
I
G1/G2SM
10
mA
Total power dissipation
T
amb
60
°
C
P
tot
200
mW
Channel temperature
T
Ch
150
°
C
Storage temperature range
T
stg
55 to +150
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
BF995
Vishay Telefunken
www.vishay.de
·
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (7)
Document Number 85009
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Drain - source
breakdown voltage
I
D
= 10
m
A, V
G1S
= V
G2S
= 4 V
V
(BR)DS
20
V
Gate 1 - source
breakdown voltage
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G1SS
8
14
V
Gate 2 - source
breakdown voltage
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
8
14
V
Gate 1 - source
leakage current
±
V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
I
G1SS
100
nA
Gate 2 - source
leakage current
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
100
nA
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
BF995
I
DSS
4
18
mA
DS
G1S
G2S
BF995A
I
DSS
4
10.5
mA
BF995B
I
DSS
9.5
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
V
G1S(OFF)
3.5
V
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
V
G2S(OFF)
3.5
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
12
15
mS
Gate 1 input capacitance
C
issg1
3.7
pF
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
C
issg2
1.6
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
1.6
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
20
dB
AGC range
V
G2S
= 4 to 2 V, f = 200 MHz
D
G
ps
50
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1.8
2.5
dB
BF995
Vishay Telefunken
www.vishay.de
·
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (7)
Document Number 85009
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
°
C )
96 12159
P
T
otal Power Dissipation ( mW
)
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8 10 12 14 16 18 20 22 24
V
DS
Drain Source Voltage ( V )
96 12160
I Drain Current ( mA
)
D
V
G1S
= 0.6V
0.4V
0.2V
0
0.2V
0.4V
0.6V
0.8V
Figure 2. Drain Current vs. Drain Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
24
2
1
0
1
2
3
4
5
6
V
G2S
Gate 2 Source Voltage ( V )
96 12161
Y
Forward
T
ransadmittance ( mS )
21S
V
DS
=15V
I
DS
=10mA
V
G1S
=0.5V
0V
0.5V
Figure 3. Forward Transadmittance vs.
Gate 2 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
2.01.51.00.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
G1S
Gate 1 Source Voltage ( V )
96 12162
Y
Forward
T
ransadmittance ( mS )
21S
V
DS
=15V
f=1MHz
V
G2S
=5V
4V
3V
2V
1V
0V
Figure 4. Forward Transadmittance vs.
Gate 1 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
G1S
Gate 1 Source Voltage ( V )
96 12163
C Gate 1 Input Capacitance ( pF )
issg1
V
DS
=15V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
2
1
0
1
2
3
4
5
6
7
V
G2S
Gate 2 Source Voltage ( V )
96 12164
C Gate 2 Input Capacitance ( pF )
issg2
V
DS
=15V
V
G1S
=0
f=1MHz
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
BF995
Vishay Telefunken
www.vishay.de
·
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (7)
Document Number 85009
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10 12 14 16 18 20 22
V
DS
Drain Source Voltage ( V )
96 12165
C Output Capacitance ( pF )
oss
V
G2S
=4V
f=1MHz
Figure 7. Output Capacitance vs. Drain Source Voltage
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
9
10
Re (y
11
) ( mS )
96 12166
Im ( y ) ( mS )
11
V
DS
=15V
V
G2S
=4V
I
D
=5...20mA
f=50...700MHz
f=700MHz
600MHz
500MHz
400MHz
300MHz
200MHz
100MHz
Figure 8. Short Circuit Input Admittance
30
25
20
15
10
5
0
5
10
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Re (y
21
) ( mS )
96 12167
Im ( y ) ( mS )
21
V
DS
=15V
V
G2S
=4V
f=50...700MHz
f=50MHz
600MHz
500MHz
400MHz
300MHz
200MHz
100MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 9. Short Circuit Forward Transfer Admittance
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Re (y
22
) ( mS )
96 12168
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
I
D
=5...20mA
f=50...700MHz
f=700MHz
600MHz
500MHz
400MHz
300MHz
200MHz
100MHz
I
D
=5mA
I
D
=20mA
Figure 10. Short Circuit Output Admittance
BF995
Vishay Telefunken
www.vishay.de
·
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (7)
Document Number 85009
V
DS
= 15 V, I
D
= 5 to 20 mA, V
G2S
= 4 V , Z
0
= 50
W
S
11
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁ
ÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
12 920
700 MHz
100
50
300
500
Figure 11. Input reflection coefficient
S
21
0
°
90
°
180
°
90
°
0.8
1.6
150
°
120
°
60
°
30
°
120
°
60
°
30
°
12 922
700MHz
200
400
50
30
°
I
D
= 20mA
10mA
5mA
Figure 12. Forward transmission coefficient
S
12
700MHz
12 921
0
°
90
°
180
°
90
°
0.04
0.08
150
°
120
°
60
°
30
°
120
°
150
°
60
°
30
°
600
300
Figure 13. Reverse transmission coefficient
S
22
12 923
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
0.2
ÁÁÁ
0.5
ÁÁ
1
ÁÁ
2
ÁÁ
5
700 MHz
100
300
500
Figure 14. Output reflection coefficient
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