BF543
Document Number 85072
Rev. 1.5, 05-Jul-05
Vishay Semiconductors
www.vishay.com
1
19240
3
2
1
Electrostatic sensitive device.
Observe precautions for handling.
G
D
S
N-Channel MOS-Fieldeffect Triode, Depletion Mode
Features
· Integrated gate protection diode
· Low feedback capacitance
· Low noise figure
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High frequency stages up to 300 MHz.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Gate, 3 = Drain
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Maximum Thermal Resistance
1)
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
µm Cu
Part
Marking
Package
BF543
LD
SOT-23
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate - source peak current
±I
GSM
10
mA
Total power dissipation
T
amb
60 °C
P
tot
200
mW
Channel temperature
T
Ch
150
°C
Storage temperature range
T
stg
-55 to +150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
R
thChA
450
K/W
e3
www.vishay.com
2
Document Number 85072
Rev. 1.5, 05-Jul-05
BF543
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= 10 V, I
D
= 4 mA, f = 1 MHz
Package Dimensions in mm (Inches)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
voltage
I
D
= 10
µA, -V
GS
= 4 V
V
(BR)DS
20
V
Gate - source breakdown
voltage
±I
GS
= 10 mA, V
DS
= 0
±V
(BR)GSS
7.5
12
V
Gate - source leakage current
±V
GS
= 6 V, V
DS
= 0
±I
GSS
50
nA
Drain current
V
DS
= 10 V, V
GS
= 0
I
DSS
1.5
8.0
mA
BF543A
I
DSS
1.5
6.5
mA
BF543B
I
DSS
4.0
8.0
mA
Gate - source cut-off voltage
V
DS
= 10 V, I
D
= 20
µA
-V
GS(OFF)
2.5
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y
21s
|
9.5
12
mS
Gate 1 input capacitance
C
issg1
2.7
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
0.9
pF
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
F
1.0
dB
Power gain
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
G
ps
22
dB
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
0.52 (0.020)
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)
0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43
(.056)
0.4 (.016)
0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95
(.037)
1.15
(.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
BF543
Document Number 85072
Rev. 1.5, 05-Jul-05
Vishay Semiconductors
www.vishay.com
3
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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