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Part Number BAS16D

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BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
Document Number 88125
www.vishay.com
14-May-02
1
New Product
Small-Signal Diodes
.
006 (0.
15)
ma
x
.
.010 (0.25)
min.
.012 (0.3)
.
076 (1.95)
.
112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.
049 (1.
25)
ma
x
.
Cathode Band
Top View
.
100 (2.55)
.0
6
5
(
1
.
65)
.043 (1.1)
SOD-123 (BAS16D)
SOD-323 (BAS16WS)
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Reverse Voltage
V
R
75
V
Peak Reverse Voltage
V
RM
100
V
Forward Current (continuous)
I
F
250
mA
Non-Repetitive Peak Forward Current at t = 1
µ
s
2.0
at t = 1ms
I
FSM
1.0
A
at t = 1s
0.5
Power Dissipation at T
amb
= 25°C
BAS16D
P
tot
350
(1)
mW
BAS16WS
200
(1)
Maximum Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
­65 to +150
(1)
°C
Note: (1) Valid provided electrodes are kept at ambient temperature
.022 (0.55)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
.
053 (1.
35)
ma
x
.
.010 (0.25)
min.
Cathode Band
.
006 (0.
15)
ma
x
.
Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)
.004 (0.1)
max.
Features
· Silicon Epitaxial Planar Diode
· Fast switching diode
· Also available in case SOT-23 with
designation BAS16
Dimensions in inches
and (millimeters)
0.094 (2.40)
0.055 (1.40)
0.055 (1.
40)
0.055
(1.40)
0.062
(1.60)
0.047 (1.
20)
Mounting Pad Layout SOD-123
Mounting Pad Layout SOD-323
Mechanical Data
Case: BAS16D = SOD-123 Plastic Case
BAS16WS = SOD-323 Plastic Case
Weight: BAS16D = approx. 0.01g
BAS16WS = approx. 0.004g
Marking Code: A6
Packaging Codes/Options:
SOD-123: D3/10K per 13" reel (8mm tape), 30K/box
D4/3K per 7" reel (8mm tape), 30K/box
SOD-323: D5/10K per 13" reel (8mm tape), 30K/box
D6/3K per 7" reel (8mm tape), 30K/box
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88125
2
14-May-02
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Symbol
Min
Typ Max
Unit
Forward Voltage at I
F
= 1mA
­
­
715
mV
I
F
= 10mA
V
F
­
­
855
mV
I
F
= 50mA
­
­
1.00
V
I
F
= 150mA
­
­
1.25
V
Leakage Current at V
R
= 25V, T
J
= 150°C
­
­
30
at V
R
= 75V
I
R
­
­
1
µ
A
at V
R
= 75V, T
J
= 150°C
­
­
50
Capacitance
C
tot
­
­
2
pF
at V
R
= 0; f = 1MH
Z
Reverse Recovery Time
from I
F
= 10mA to I
R
= 10mA
t
rr
­
­
6
ns
I
R
= 1mA, R
L
= 100
Thermal Resistance
BAS16D
R
JA
­
­
375
(1)
°C/W
Junction to Ambient Air
BAS16WS
650
(1)
°C/W
(1) Valid provided that electrodes are kept at ambient temperature
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
Document Number 88125
www.vishay.com
14-May-02
3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BAS16D
BAS16WS
BAS16D, BAS16WS
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88125
4
14-May-02
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)