2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028--Rev. F, 04-Jun-01
www.vishay.com
7-1
N-Channel JFETs
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
r
DS(on)
Max (
W
)
I
D(off)
Typ (pA)
t
ON
Typ (ns)
2N5432
4 to 10
5
10
2.5
2N5433
3 to 9
7
10
2.5
2N5434
1 to 4
10
10
2.5
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 2N5432 <5
W
D
Fast Switching--t
ON
: 2.5 ns
D
High Off-Isolation--I
D(off)
: 10 pA
D
Low Capacitance: 11 pF
D
Low Insertion Loss
D
Low Error Voltage
D
High-Speed Analog Circuit Performance
D
Negligible "Off-Error," Excellent Accuracy
D
Good Frequency Response
D
Eliminates Additional Buffering
D
Analog Switches
D
Choppers
D
Sample-and-Hold
D
Normally "On" Switches
D
Current Limiters
DESCRIPTION
The 2N5432/5433/5434 are suitable for high-performance
analog switching and amplifier applications. Breakdown
voltage characteristics, low on-resistance, and very fast
switching make these devices are ideal for a wide range of
applications.
The hermetically-sealed TO-206AC (TO-52) package is
suitable for processing per MIL-S-19500 (see Military
Information). For similar products in TO-236 (SOT-23) or
TO-226AA (TO-92) packages, see the J/SST108 series data
sheet.
G and Case
TO-206AC
(TO-52)
D
S
Top View
1
2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.4 mW/
_
C above 25
_
C
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70245
S-04028--Rev. F, 04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5432
2N5433
2N5434
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A , V
DS
= 0 V
32
25
25
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 5 V, I
D
= 3 nA
4
10
3
9
1
4
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
150
100
30
mA
V
GS
= 15 V, V
DS
= 0 V
5
200
200
200
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
10
200
200
200
nA
Gate Operating Current
c
I
G
V
DG
= 10 V, I
D
= 10 mA
10
V
DS
= 5 V, V
GS
= 10 V
10
200
200
200
pA
Drain Cutoff Current
I
D(off)
T
A
= 150
_
C
20
200
200
200
nA
Drain-Source On-Voltage
V
DS(on)
50
70
100
mV
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 10 mA
2
5
7
10
W
Gate-Source Forward Voltage
c
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
c
g
fs
V
DS
= 5 V, I
D
= 10 mA
17
mS
Common-Source
Output Conductance
c
g
os
V
DS
= 5 V, I
D
= 10 mA
f = 1 kHz
600
m
S
Drain-Source On-Resistance
r
ds(on)
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
5
7
10
W
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
GS
= 10 V
20
30
30
30
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 0 V, V
GS
= 10 V
f = 1 MHz
11
15
15
15
pF
Equivalent Input
Noise Voltage
c
e
n
V
DS
= 5 V, I
D
= 10 mA
f = 1 kHz
3.5
nV
/
Hz
Switching
t
d(on)
2
4
4
4
Turn-On Time
b
t
r
V
DD
= 1.5 V, V
GS(H)
= 0 V
0.5
1
1
1
b
t
d(off)
V
DD
= 1.5 V, V
GS(H)
= 0 V
See Switching Circuit
4
6
6
6
ns
Turn-Off Time
b
t
f
18
30
30
30
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NIP
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
This parameter not registered with JEDEC.
2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028--Rev. F, 04-Jun-01
www.vishay.com
7-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
20
0
8
10
4
8
4
0
1000
800
400
200
0
16
12
600
2
6
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
I
DSS
r
DS
200
0
160
80
40
0
8
10
4
50
40
20
10
0
120
30
2
6
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
g
fs
and g
os
@ V
DS
= 5 V
V
GS
= 0 V, f = 1 kHz
g
fs
g
os
100
0
6
8
10
40
20
0
80
60
2
4
Output Characteristics
V
DS
Drain-Source Voltage (V)
0.4 V
0.6 V
0.8 V
0.2 V
V
GS(off
)
= 2 V
V
GS
= 0 V
100
0
0.3
0.4
0.5
40
20
0
80
60
0.1
0.2
Output Characteristics
V
DS
Drain-Source Voltage (V)
0.5 V
1.0 V
1.5 V
0.2 V
V
GS(off)
= 4 V
V
GS
= 0 V
5
0
6
8
10
4
3
2
1
0
30
0
15
20
10
5
25
24
18
12
6
0
2
4
Turn-On Switching
Turn-Off Switching
Switching T
ime
(ns)
V
GS(off)
Gate-Source Cutoff Voltage (V)
I
D
Drain Current (mA)
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
W
V
GS(L)
= 10 V
I
D
= 25 mA
I
D
= 10 mA
t
r
t
d(off)
V
GS(off)
= 2 V
t
d(off)
independent
of device V
GS(off)
V
DD
= 1.5 V, V
GS(L)
= 10 V
V
GS(off)
= 8 V
Switching T
ime
(ns)
t
d(on)
t
f
r
DS
(
on)
Drain-Source On-Resistance (
)
g
fs
Forward T
ransconductance (mS)
I
DS
S
Saturation Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
g
os
Output Conductance (
m
S)
2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-4
Document Number: 70245
S-04028--Rev. F, 04-Jun-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
20
10
0
1
10
100
40
30
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 25
_
C
V
GS(off)
= 2 V
4 V
8 V
40
55
25
125
32
24
16
8
0
15
85
35
5
45
65
105
On-Resistance vs. Temperature
T
A
Temperature (
_
C)
V
GS(off)
= 2 V
4 V
8 V
I
D
= 10 mA
r
DS
changes X 0.7%/
_
C
100
0
12
16
8
4
20
40
20
0
80
60
Capacitance vs. Gate-Source Voltage
Capacitance (pF)
V
GS
Gate-Source Voltage (V)
V
DS
= 0 V
f = 1 MHz
C
iss
C
rss
Gate Leakage Current
0
4
8
12
1 pA
10 pA
100 pA
1 nA
10 nA
16
20
100 nA
V
DG
Drain-Gate Voltage (V)
I
GSS
@ 125
_
C
T
A
= 125
_
C
T
A
= 25
_
C
5 mA
I
GSS
@ 25
_
C
10 mA
1 mA
100
10
1
10 100
1
k
100
k
10 k
Noise Voltage vs. Frequency
f Frequency (Hz)
V
DS
= 5 V
I
D
= 10 mA
I
D
= 40 mA
100
10
1
1
10
100
Transconductance vs. Drain Current
I
D
Drain Current (mA)
V
DS
= 5 V
f = 1 kHz
T
A
= 55
_
C
125
_
C
V
GS(off)
= 4 V
I
D
= 10 mA
5 mA
1 mA
25
_
C
e
n
Noise V
oltage nV
/ Hz
r
DS
(
on)
Drain-Source On-Resistance (
)
g
fs
Forward T
ransconductance (mS)
r
DS
(
on)
Drain-Source On-Resistance (
)
I
G
Gate Leakage
2N5432/5433/5434
Vishay Siliconix
Document Number: 70245
S-04028--Rev. F, 04-Jun-01
www.vishay.com
7-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100
10
1
0.1
10
100
50
Common Gate Input Admittance
(mS)
f Frequency (MHz)
g
ig
b
ig
T
A
= 25
_
C
V
DG
= 20 V
I
D
= 20 mA
20
100
10
1
0.1
10
100
50
Common Gate Forward Admittance
g
fg
b
fg
T
A
= 25
_
C
V
DG
= 20 V
I
D
= 20 mA
(mS)
f Frequency (MHz)
20
10
1.0
0.1
0.01
10
100
50
Common Gate Reverse Admittance
g
rg
b
rg
(mS)
f Frequency (MHz)
T
A
= 25
_
C
V
DG
= 20 V
I
D
= 20 mA
20
100
10
1
0.1
10
100
50
Common Gate Output Admittance
b
og
g
og
(mS)
f Frequency (MHz)
T
A
= 25
_
C
V
DG
= 20 V
I
D
= 20 mA
20
SWITCHING TIME TEST CIRCUIT
2N5432
2N5433
2N5434
V
GS(L)
12 V
12 V
12 V
R
L
*
145
W
143
W
140
W
I
D(on)
10 mA
10 mA
10 mA
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
W
Input Capacitance 1.5 pF
51
51
1 k
V
IN
Scope
V
DD
R
L
OUT
V
GS(H)
V
GS(L)
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