UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R210-004,A
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BV
CEO
=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to MMBT1015
MARKING
SOT-113
1
3
2
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER SYMBOL
RATING
UNIT
Collector-base voltage
V
CBO
60 V
Collector-emitter voltage
V
CEO
50 V
Emitter-base voltage
V
EBO
5 V
Collector dissipation(Ta=25
°
C)
Pc 250
mW
Collector current
Ic
150
mA
Base current
I
B
50
mA
Junction Temperature
T
j
125
°
C
Storage Temperature
T
STG
-55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
Parameter Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector cut-off current
I
CBO
V
CB
=60V,I
E
=0
100
nA
Emitter cut-off current
I
EBO
V
EB
=5V,Ic=0
100
nA
DC current gain(note)
h
FE1
h
FE2
V
CE
=6V,Ic=2mA
V
CE
=6V,Ic=150mA
70
25
700
Collector-emitter saturation voltage
V
CE
(sat) Ic=100mA,I
B
=10mA
0.1
0.25
V
Base-emitter saturation voltage
V
BE
(sat) Ic=100mA,I
B
=10mA
1.0
V
Current gain bandwidth product
f
T
V
CE
=10V,Ic=50mA 80
MHz
Output capacitance
Cob
V
CB
=10V,I
E
=0,f=1MHz
2.0
3.0
pF
Noise Figure
NF
Ic=-0.1mA,V
CE
=6V
R
G
=10k
,f=100Hz
1.0
1.0 dB
C4
UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R210-004,A
CLASSIFICATION OF hFE1
RANK Y G L
RANGE 120-240 200-400 350-700
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,C
o
lle
cto
r
cu
rre
n
t
(m
A
)
0
4
8
12
16
20
0
20
40
60
80
100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
, D
C
cu
rre
n
t
G
a
in
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
V
CE
=6V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic,C
o
lle
cto
r
cu
rre
n
t
(m
A
)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=6V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
Sat
u
r
a
t
i
on v
o
l
t
age (
m
V)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
Cur
r
ent
Gai
n
-
bandwi
d
t
h
pr
oduc
t
,
f
T
(M
H
z
)
10
0
10
1
10
2
V
CE
=6V
Collector-Base voltage (V)
Cob,
Capac
i
t
anc
e (
p
F
)
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
I
E
=0
I
B
=50
µ
A
I
B
=100
µ
A
I
B
=150
µ
A
I
B
=200
µ
A
I
B
=250
µ
A
I
B
=300
µ
A
10
-1
10
-1
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