UTC BT137
TRIAC
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-003,A
TRIACS
DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in
applications requiring high bidirectional transient and blocking
voltage capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating voltages and static switching
.
SYMBOL
MT2
MT1
G
TO-220
1
1:MT1 2:MT2 3:GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
RATINGS
UNIT
600 -600
Repetitive Peak Off State Voltage BT137-600
BT137-800
V
DRM
800* -800
V
RMS On-state Current
Full sine wave; Tmb102
°C
I
T(RMS)
8
A
Non-Repetitive Peak. On-State Current
(Full sine wave; Tj=25
°C prior to surge)
t=20ms
t=16.7ms
I
TSM
65
71
A
I
2
t For Fusing
t=10ms
I
2
t
21
A
2
s
Repetitive Rate of Rise of On-state Current after Triggering
I
TM
=12A;I
G
=0.2A,dI
G
/dt=0.2A/
µs
T2+G+
T2+G-
T2-G-
T2-G+
dI
T
/dt
50
50
50
10
A/
µs
Peak Gate Voltage
V
GM
5 V
Peak Gate Current
I
GM
2 A
Peak Gate Power
P
GM
5 W
Average Gate Power (Over any 20ms period)
P
G(AV)
0.5
W
Operating Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
-40~150
°C
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch
to the on-state. The rate of rise of current should not exceed 6A/
µs.
UTC BT137
TRIAC
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-003,A
THERMAL RESISTANCES
PARAMETER SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance Junction to Mounting Base
Full cycle
Half cycle
Rth j-mb
2.0
2.4
K/W
Thermal Resistance Junction to Ambient
In free air
Rth j-a
60
K/W
ELECTRICAL CHARACTERISTICS
(Tj=25
°C,unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
Gate Trigger Current
I
GT
V
D
=12V, I
T
=0.1A
T2+G+
T2+G-
T2-G-
T2-G+
5
8
11
30
35
35
35
70
mA
Latching Current
I
L
V
D
=12V, I
GT
=0.1A
T2+G+
T2+G-
T2-G-
T2-G+
7
16
5
7
30
45
30
45
mA
On-State Voltage
V
T
I
T
=10A
1.3
1.65
V
V
D
=12V, I
T
=0.1A
0.7
1.5
V
Gate Trigger Voltage
V
GT
V
D
=400V, I
T
=0.1A Tj=125
°C 0.25
0.4 V
Holding Current
I
H
V
D
=12V, I
GT
=0.1A
5
20
mA
Off-state Leakage Current
I
D
V
D
=V
DRM(max)
,
Tj=125
°C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of off-state
Voltage
dV
D
/dt V
DM
=67% V
DRM(max)
, Tj=125
°C
Exponential waveform,Gate
open circuit
100 250 V/
µs
Critical Rate of Change of
commutating Voltage
dV
com
/dt V
DM
=400V , Tj=95
°C, I
T(RMS)
=8A
dl
com
/dt =3.6A/ms Gate open
circuit
20 V/
µs
Gate Controlled Turn-on Time
tgt
I
TM
=12A,V
D
=V
DRM(max)
,I
G
=0.1A
dI
G
/dt=5A/
µs
2
µs
UTC BT137
TRIAC
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-003,A
TYPICAL CHARACTERISTICS
1ms
100us
10us
1000
T/s
Figure 2. Maximum Permissible Non-repetitive
Peak On-state Current I
TSM
,vs Pulse Width
t
p
,for Sinusoidal Currents,t
p
20ms
10
100
4
8
0
12
2
IT(RMS)/A
Figure 1.Maximum on -state Dissipation.Ptot vs RMS On-
state Current,I
T(RMS)
,Where=conduction Angle.
8
0
10
6
10ms
100ms
100
150
-50
50
0
10
2
Tmb/
4
0
101
121
105
125
117
Ptot/W
Tsp(max)/C
=180
=120
=90
=60
=30
Figure 4.Maximum Permissible RMS Current I
T(RMS)
vs mounting baseTemperature T
mb
IT(RMS)/A
102
ITSM/A
I
T
I
TSM
time
Tj initial=25max
dI
T
/dt limit
T2-G+ quadrant
25
10
Surge Duration /S
15
20
5
0
Figure 5.Maximum Permissible Repetitive RMS on-state
Current IT
(RMS),
vs Surge Duration,for Sinusoidal
Currents,f=50Hz;Tmb102
IT(RMS)/A
0.01
0.1
1
10
70
40
Number of Cycles at 50Hz
80
60
20
0
Figure 3 .Maximum Permissible Non-Repetitive
peak on-state Current I
TSM
,vs Number of Cycles,
for Sinusoidal Currents,f=50Hz
10
100
ITSM/A
1
1000
I
T
time
I
TSM
Tj initial=25max
100
150
-50
50
0
1.6
0.8
Tj/
1.2
1.4
1
0.6
0.4
Figure 6.Normalised Gate Trigger Voltage V
GT
(Tj)/
V
GT
(25),vs Junction Temperature Tj
V
GT
(25)
V
GT
(Tj)
4
10
2
6
109
113
6
8
50
30
10
T
UTC BT137
TRIAC
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-003,A
1ms
0.1ms
10us
0.1
tp/s
Figure 11.Transient Thermal Impedance
Zth j-mb,vs Pulse Width tp
0.001
0.01
10ms
0.1s
1.5
2
0
1
0.5
25
VT/V
20
15
5
0
Figure 10.Typical and Maximum
On-state Characteristic
IT/A
Zth j-mb(K/W)
Tj/
Figure 7.Normalised Gate Trigger Current
I
GT
(Tj)/I
GT
(25),vs Junction Temperature Tj
typ
max
100
150
-50
50
0
3
1
Tj/
2
2.5
1.5
0.5
0
Figure 8.Normalised Latching Current
I
L
(Tj)/I
L
(25),vs Junction Temperature Tj
I
L
(25)
I
L
(Tj)
100
150
-50
50
0
3
1
Tj/
2
2.5
1.5
0.5
0
Figure 9.Normalised Holding Current
I
H
(Tj)/I
H
(25),vs Junction Temperature Tj
I
H
(25)
I
H
(Tj)
1s
10s
1
10
unidirectional
bidirectional
tp
t
P
D
Figure 12.Typical commutation dV/dt vs junction
temperature,parameter commutation dl
T
/dt.The triac should
commutate when the dV/dt is below the value on the
appropriate curve for pre-commutation dl
T
/dt
2.5
3
Tj=125
Tj=25
Vo=1.264V
Rs=0.0378Ohms
10
dV/dt(V/us)
1000
10
100
1
100
150
50
0
Tj/
dIcom/
dt=10A/
ms
7.9 6.1 4.7 3.6 2.8
off-state dV/dt limit
T2+G+
T2+G-
T2-G-
T1-G+
100
150
-50
50
0
3
1
2
2.5
1.5
0.5
0
I
GT
(25)
I
GT
(Tj)
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