T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-32H22
Description
Package Dimensions
The MID-32H22 is a NPN silicon phototransistor mou-
nted in a lensed , special dark plastic package. The lens-
ing effect of the package allows an acceptance half view
angle of 20° that is measured from the optical axis to
the half power point .
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Good spectral matching IRED (
p 880/850 nm) type
l
Acceptance view angle : 40
o
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
02/04/2002
Unity Opto Technology Co., Ltd.
Unit : mm (inches )
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
3.10±0.20
(.122±.008)
2.54
(.100)
1.00MIN
(.040)
0.50 TYP.
(.020)
23.40MIN
(.920)
3.85
(.152)
3.55±0.25
(.140±.010)
5.28±0.30
(.208±.012)
4.28±0.20
(.169±.008)
C
E
MID-32H22
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter
I
c
=0.1mA
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=0.1mA
Breakdown Voltage
Ee=0
Collector-Emitter
I
c
=0.5mA
Saturation Voltage
Ee=0.1mW/cm
2
Rise Time
V
CC
=5V, R
L
=1K
Tr
15
Fall Time
I
C
=1mA
Tf
15
Collector Dark
V
CE
=10V
Current
Ee=0
On State Collector
V
CE
=5V
Current
Ee=0.1mW/cm
2
Typical Optical-Electrical Characteristic Curves
02/04/2002
V
V
CE(SAT)
V
(BR)CEO
30
V
V
V
(BR)ECO
5
Test Conditions
nA
µ
S
I
C(ON)
I
CEO
0.4
m
100
0.4
Unity Opto Technology Co., Ltd.
0
40
80
120
160
200
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
R
L
- Load Resistance - K
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Tr Tf Rise and Fall Time -
µ
S
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
Iceo-Collector Dark Current -
µ
A
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
0
2
4
6
8
10
0
0.1 0.2 0.3 0.4 0.5 0.6
Vce = 5 V
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
Relative Collector Current (mA)
I
C
Normalized Collector Current
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Vce = 5 V
Ee = 0.1 mW/cm
2
@
= 940 nm
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
600
700
800
900
1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
Relative Spectral Sensitivity
FIG.6 SENSITIVITY DIAGRAM
1.0
0.9
0.8
Relative Sensitivity
0° 10° 20°
0.5 0.3 0.1 0.2 0.4 0.6
30°
90°
70°
60°
50°
80
40°
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