TO-92MOD Plastic-Encapsulate
d Transistors
2SA1020
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 900 mW (Tamb=25
)
Collector current
I
CM
: -2 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-100
µ
A, I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA,
I
B
=0
-50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
µ
A, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50
V, I
E
=0
-1
µ
A
Emitter cut-off current
I
EBO
V
EB
=-5 V, I
C
=0
-1
µ
A
DC current gain
h
FE(1)
V
CE
=-2
V, I
C
=-500 A
70
240
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-1A, I
B
=-50
mA
-0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-1
A, I
B
=-50
mA
-1.2
V
Transition frequency
f
T
V
CE
=-2
V, I
C
=-500
mA
100
MHz
CLASSIFICATION OF h
FE(1)
Rank O
Y
Range
70-140 120-240
TO-92MOD
1.
EMITTER
2.
COLLECTOR
3.
BASE
123
Transys
Electronics
L I M I T E D
PDF 
ZIP