TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
20 - 40 GHz X2 Frequency Multiplier TGC1430F
Key Features and Performance
·
0.25um pHEMT Technology
·
20 - 40 GHz Output Frequencies
·
10 - 20 GHz Fundamental Frequencies
·
-12 +/- 2dB Conversion Gain
·
18 dBm Input Drive Optimum
·
25dB Fundamental Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
·
Point-to-Point Radio
·
Point-to-Multipoint Communications
Chip Dimensions 1.50 mm x 1.50 mm
Conversion Gain vs Input Frequency (Input @ 17.5dBm)
Conversion Gain and Fundamental Isolation
for 27 - 32 GHz Output
Fundamental Isolation
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
Input Frequency (GHz)
C
onve
r
s
ion Ga
in (
d
B
)
@17.5dBm
0
5
10
15
20
25
30
35
40
45
6
8
10
12
14
16
18
20
22
Input Frequency (GHz)
F
undament
al
I
s
ol
at
i
on (
d
B
)
@17.5dBm
-25
-20
-15
-10
-5
0
13.5
14.0
14.5
15.0
15.5
16.0
Input Frequency (GHz)
C
onve
r
s
ion Ga
in (
d
B
)
10
15
20
25
30
35
F
und. I
s
ola
tion
(
dB
)
Input Drive of +17.5dBm
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGC1430F - Recommended Assembly Drawing
TGC1430F
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
·= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
·= alloy station or conveyor furnace with reducing atmosphere
·= no fluxes should be utilized
·= coefficient of thermal expansion matching is critical for long-term reliability
·= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
·= vacuum pencils and/or vacuum collets preferred method of pick up
·= avoidance of air bridges during placement
·= force impact critical during auto placement
·= organic attachment can be used in low-power applications
·= curing should be done in a convection oven; proper exhaust is a safety concern
·= microwave or radiant curing should not be used because of differential heating
·= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
·= thermosonic ball bonding is the preferred interconnect technique
·= force, time, and ultrasonics are critical parameters
·= aluminum wire should not be used
·= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
·= maximum stage temperature: 200C
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430F
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