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TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

Advance Product Information

0.3 - 10 GHz Downconverter TGC1411-EPU

Key Features and Performance

0.25um pHEMT Technology

0.3-10 GHz RF/LO Frequency Range

0.15-2.5 GHz IF Frequency Range

Nominal Conversion Gain of 12 dB

Bias 3-5V @ 26 mA

Chip Dimensions 1.8 mm x 2.6mm

Primary Applications

Satellite Systems

Point-to-Point Radio

The TriQuint TGC1411-EPU is a double balanced
MMIC mixer design using TriQuint's proven 0.25 um
Power pHEMT process to support a variety of
communication system applications including satellite.

The double balanced design consists of an integrated
Gilbert cell mixer core, RF/LO baluns, differential
combiner, and output driver amplifier. The TGC1411
may be operated from a single +3 V to +5 V power
supply with typical current draw of 26 mA. The
nominal LO power requirement is -5 dBm. The
TGC1411 may also be operated as an up-converter.

The TGC1411 requires a minimum of off-chip
components employing only a 100 pF off-chip bypass
capacitor for the power supply line. No additional off-
chip RF matching components are required. Each
device is 100% DC and RF tested on-wafer to ensure
performance compliance. The device is available in
chip form.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

OUT

TGA1411 Typical Down-Conversion Gain

LSB, +5.0V, LO = -5dBm, +25C

0.1

1.1

2.1

3.1

4.1

5.1

6.1

7.1

8.1

9.1

10.1

RF Frequency (GHz)

Conversion Gain (dB)

IF=151MHz
IF=501MHz
IF=1001MHz
IF=1501MHz
IF=2001MHz
IF=2501MHz

TGC 1411

TGA1411 Typical P1dB and SSB Noise Figure

LSB, +5.0V, LO = -5dBm, +25C

-9

-8

-7

-6

-5

-4

-3

-2

-1

0.1

1.1

2.1

3.1

4.1

5.1

6.1

7.1

8.1

9.1

10.1

RF Frequency (GHz)

Output P1dB (dBm)

SSB Noise Figure (dB)

Noise

Figure

P1dB

TGC 1411

TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

Advance Product Information

RECOMMENDED MAXIMUM RATINGS

Symbol

Parameter

Value

Notes

Positive Supply Voltage

8 V

Positive Supply Current

80 mA

Power Dissipation

0.64 W

Input Continuous Wave Power

14 dBm

Operating Channel Temperature

150

1/, 2/

Mounting Temperature (30 seconds)

320

STG

Storage Temperature

-65

C to 150

These ratings apply to each individual FET

Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.

Total current for the entire MMIC

Electrical Characteristics

DC PROBE TESTS

= 25

Symbol

Parameter

Minimum

Maximum

Value

Test FET

Pinch-off Voltage

-1.5

-0.5

Test FET

Breakdown Voltage gate-source

-30

-8

Test FET

Breakdown Voltage gate-drain

-30

-8

ON-WAFER RF PROBE CHARACTERISTICS

= 25

Symbol Parameter

Test Condition

Vd=5V, LO=-5dBm

Limit
Min Nom Max

Units

Conversion
Gain

= 1.0 GHz

= 1.6 GHz

dB
dB

ILO

LO Isolation

= 1.6 GHz

-30

-20

P1dB

Output P1dB

= 1.0 GHz

= 1.6 GHz

-5

-1

dBm

IDC

DC Current

TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

Advance Product Information

500

1000

1500

2000

2500

3000

3500

Number of Devices

Mean = 16.7 dB

Sigma = 0.54 dB

RF-Probe Performance Summary

LO-IF Isolation

Down-Conversion Gain

100

200

300

400

500

600

700

LO to Output Isolation (dB)

Number of Devices

Mean = 29.3 dB

Sigma = 7.7 dB

Typical Performance

Parameter

Units

+5V Supply

+3V Supply

RF Frequency

GHz

0.3 - 10.0

IF Frequency

GHz

0.15 - 2.5

LO Frequency

GHz

0.45 - 12.5

LO Power

dBm

-5

Conversion Gain*

17.0

14.5

Output P

1dB

dBm

-1

0.0

-8

-4.5

SSB Noise Figure*

15.0

11.0

LO Isolation

-30

Input Port Return Loss

-12

Output Port Return Loss

-12

LO Port Return Loss

-12

Supply Current

28.0

24.0

* IF = 501 MHz

TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

Advance Product Information

Chip Assembly and Bonding Diagram

Reflow process assembly notes:

AuSn (80/20) solder with limited exposure to temperatures at or above 300

alloy station or conveyor furnace with reducing atmosphere

no fluxes should be utilized

coefficient of thermal expansion matching is critical for long-term reliability

storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

vacuum pencils and/or vacuum collets preferred method of pick up

avoidance of air bridges during placement

force impact critical during auto placement

organic attachment can be used in low-power applications

curing should be done in a convection oven; proper exhaust is a safety concern

microwave or radiant curing should not be used because of differential heating

coefficient of thermal expansion matching is critical

Interconnect process assembly notes:

thermosonic ball bonding is the preferred interconnect technique

force, time, and ultrasonics are critical parameters

aluminum wire should not be used

discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

maximum stage temperature: 200

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.

OUT

100 pF

Part Number TGC1411