TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Advance Product Information
February 7, 2006
1
4 Watt Ka Band Packaged Amplifier
TGA4905-CP
Key Features and Performance
·
36 dBm VSAT band Psat
·
22 dB Nominal Gain
·
25 - 31 GHz Frequency Range
·
0.25µm pHEMT Technology
·
Bias Conditions: 6 V, 2.1 A (Quiescent)
up to 4 A under RF drive
·
Package Dimensions:
13.34 x 9.65 x 1.85 mm
(0.525 x 0.380 x 0.073 in)
Measured Performance
Bias Conditions: Vd=6 V Idq=2.1 A
Primary Applications
·
Satellite Ground Terminals
·
Point to Point
Product Description
The TriQuint TGA4905-CP is a compact
4 Watt High Power Amplifier Packaged
MMIC for Ka-band applications. The part
is designed using TriQuint's proven
standard 0.25 um gate Power pHEMT
production process.
The TGA4905 provides a nominal 36
dBm of output power at an input power
level of 18 dBm from 25-31 GHz with a
small signal gain of 22 dB.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals,
point to point radio and LMDS.
The TGA4905-CP is 100% RF tested to
ensure performance compliance.
0
5
10
15
20
25
30
25
26
27
28
29
30
31
Frequency (GHz)
G
a
in (
d
B)
-30
-20
-10
0
10
20
30
R
etu
r
n
L
o
ss (d
B
)
Gain
Input RL
Output RL
20
22
24
26
28
30
32
34
36
38
40
25
26
27
28
29
30
31
Frequency (GHz)
P
out @ P
i
n=1
8
d
Bm (dBm)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Advance Product Information
February 7, 2006
2
TGA4905-CP
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
D
Drain Voltage
8 V
2/
V
G
Gate Voltage Range
-5 V to 0 V
I
D
Drain Current (Quiescent)
3.0 A
2/
| I
G
|
Gate Current
62 mA
P
IN
Input Continuous Wave Power
24 dBm
2/
P
D
Power Dissipation
16.8 W
2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/ 5/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
P
D
is the power dissipation allowed in order to reach a channel temperature of 150
°
C with a package
base temperature of 70
°
C. When operated at this power dissipation with a baseplate temperature of
70
°
C, the MTTF is 1.0E+6 hours.
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Advance Product Information
February 7, 2006
3
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 6 V, Idq = 2.1 A)
SYMBOL
PARAMETER
TEST CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 25 31GHz
22
dB
IRL
Input Return Loss
F = 25 31GHz
10
dB
ORL
Output Return Loss
F = 25 31GHz
8
dB
PWR
Output Power @ Psat
F = 25 31GHz
36
dBm
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
q
C)
R
4
JC
(
q
C/W)
T
M
(hrs)
R
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 6 V
I
D
= 2.1 A (Quiescent)
P
DISS
= 12.6 W
128.35
4.63
6.9 E+6
Note: Backside of package is at 70
°
C baseplate temperature. Worst case is at saturated
output power when DC power consumption rises to 23 W with 4 W RF power delivered to
load. Power dissipated is 19 W and the temperature rise in the channel is 88
°
C.
Baseplate temperature must be reduced to 62
°
C to remain below the 150
°
C maximum
channel temperature.
TGA4905-CP
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Advance Product Information
February 7, 2006
4
Measured Fixtured Performance
V
D
= 6 V Idq = 2.1 A
TGA4905-CP
20
22
24
26
28
30
32
34
36
38
40
25
26
27
28
29
30
31
Frequency (GHz)
Pout @ Pin=18dBm (dBm)
0
5
10
15
20
25
30
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Gain (dB)
-30
-20
-10
0
10
20
30
Retur
n Loss (dB)
Gain
Input RL
Output RL
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Advance Product Information
February 7, 2006
5
0
5
10
15
20
25
30
35
40
-5
-3
-1
1
3
5
7
9
11
13
15
17
19
Pin (dBm)
Pout
(
d
Bm)
& Pow
e
r
Gain (dB
)
1.8
2.1
2.4
2.7
3
3.3
3.6
3.9
4.2
Ids (A)
Pout
Gain
Ids
Measured Fixtured Performance
V
D
= 6 V Idq = 2.1 A
TGA4905-CP
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