TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
1
22
23
24
25
26
27
28
29
30
32
34
36
38
40
42
44
46
48
Frequency (GHz )
P
out
(
d
B
m
)
-25
-20
-15
-10
-5
0
5
10
15
20
25
32
34
36
38
40
42
44
46
48
Frequency (GHz)
S
-
p
a
ra
m
e
te
rs
(d
B
)
33 - 47 GHz Wide Band Driver Amplifier TGA4522
Key Features
·
Frequency Range: 33 - 47 GHz
·
27.5 dBm Nominal Psat @ 38GHz
·
27 dBm P1dB @ 38 GHz
·
36 dBm OTOI @ Pin = 19 dBm/Tone
·
18 dB Nominal Gain @ 38GHz
·
15 dB Nominal Return Loss @ 38GHz
·
Bias: 6 V @ 400 mA Idq
·
0.15 um 3MI pHEMT Technology
·
Chip Dimensions 2.00 x 1.45 x 0.10 mm
(0.079 x 0.057 x 0.004 in)
Primary Applications
·
Digital Radio
·
Point-to-Point Radio
·
Point-to-Multipoint Communications
·
Military SAT-COM
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
Product Description
The TriQuint TGA4522 is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint's
0.15um power pHEMT production process.
The TGA4522 nominally provides 27.5 dBm
saturated output power, and 27 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 18 dB, and return loss of 15 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4522 is 100% DC and RF tested on-wafer
to ensure performance compliance.
Lead-Free & RoHS compliant.
Gain
IRL
ORL
Psat
P1dB
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
2
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
8 V
2/
Vg
Gate Voltage Range
-2 TO 0 V
Id
Drain Current
700 mA
2/ 3/
Ig
Gate Current
16 mA
3/
P
IN
Input Continuous Wave Power
23 dBm
P
D
Power Dissipation
See note 4/
2/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
0
C T
BASE
0
C) / 35.5 (
0
C/W)
Where T
BASE
is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4522
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
3
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
TGA4522
PARAMETER
TYPICAL
UNITS
Frequency Range
33 - 47
GHz
Drain Voltage, Vd
6.0
V
Drain Current, Id
400
mA
Gate Voltage, Vg
-0.6
V
Small Signal Gain, S21
18
dB
Input Return Loss, S11
15
dB
Output Return Loss, S22
15
dB
Output Power @ 1dB Gain Compression, P1dB
26
dBm
Saturated Power, Psat
27
dBm
OTOI @ 19dBm/Tone
36
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 6 V
Idq = 400 mA
Pdiss = 2.4 W
144
30.8
1.7E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
4
-30
-25
-20
-15
-10
-5
0
5
10
15
20
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
R
e
turn Los
s
(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz )
Ga
i
n
(d
B
)
TGA4522
Measured Data
Bias Conditions: Vd = 5-6 V, Idq = 400 mA
IRL
ORL
6V
5V
Bias Conditions: Vd = 6 V, Idq = 400 mA
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
5
20
21
22
23
24
25
26
27
28
29
30
32
34
36
38
40
42
44
46
48
Fre que ncy (GHz)
S
a
tu
r
a
te
d
O
u
t
p
u
t
P
o
w
e
r
(d
B
m
)
6V
5V
20
21
22
23
24
25
26
27
28
29
30
32
34
36
38
40
42
44
46
48
Fre que ncy (GHz)
O
u
tp
u
t
P
o
wer
@
1d
B
Gai
n
C
o
m
p
r
essi
o
n
(d
B
m
)
6V
5V
TGA4522
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
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