TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
1
19
20
21
22
23
24
25
26
27
32
34
36
38
40
42
44
46
48
Frequency (GHz)
O
u
t
put
Pow
e
r
(
d
B
m
)
-15
-10
-5
0
5
10
15
20
25
32
34
36
38
40
42
44
46
48
Frequency (GHz)
S-
Pa
r
a
m
e
t
e
r
s
(
d
B
)
32 - 45 GHz Wide Band Driver Amplifier TGA4521
Key Features
·
Frequency Range: 32 - 45 GHz
·
25 dBm Nominal Psat @ 38 GHz
·
24 dBm P1dB @ 38 GHz
·
16 dB Nominal Gain @ 38 GHz
·
33 dBm OTOI @ 16dBm/Tone
·
Bias: 6 V @ 175 mA Idq
·
0.15 um 3MI pHEMT Technology
·
Chip Dimensions 1.60 x 0.75 x 0.10 mm
(0.063 x 0.030 x 0.004 in)
Primary Applications
·
Digital Radio
·
Point-to-Point Radio
·
Point-to-Multipoint Communications
·
Military SAT-COM
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA
Psat
P1dB
Product Description
The TriQuint TGA4521 is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint's
0.15um power pHEMT production process.
The TGA4521 nominally provides 25 dBm
saturated output power, and 24 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 16 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4521 is 100% DC and RF tested on-wafer
to ensure performance compliance.
Lead-Free & RoHS compliant.
Gain
IRL
ORL
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
2
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
6.5 V
2/
Vg
Gate Voltage Range
-2 TO 0 V
Id
Drain Current
350 mA
2/ 3/
Ig
Gate Current
9 mA
3/
P
IN
Input Continuous Wave Power
20 dBm
P
D
Power Dissipation
See note 4/
2/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
0
C T
BASE
0
C) / 70 (
0
C/W)
Where T
BASE
is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4521
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
3
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
TGA4521
PARAMETER
TYPICAL
UNITS
Frequency Range
32 - 45
GHz
Drain Voltage, Vd
6.0
V
Drain Current, Id
175
mA
Gate Voltage, Vg
-0.7
V
Small Signal Gain, S21
16
dB
Input Return Loss, S11
6
dB
Output Return Loss, S22
10
dB
Output Power @ 1dB Gain Compression, P1dB
24
dBm
Saturated Power, Psat
25
dBm
OTOI @ 16dBm/tone
33
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 175 mA
Pdiss = 1.05 W
144
70
1.7E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
4
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
28
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
R
e
tu
rn
L
o
s
s
(d
B
)
0
2
4
6
8
10
12
14
16
18
20
22
24
28
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
Ga
in
(d
B
)
TGA4521
Measured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA
ORL
IRL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 28, 2005
5
4
6
8
10
12
14
16
18
20
22
24
26
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pin (dBm)
Pou
t
(
d
Bm
)
125
150
175
200
225
250
275
300
325
350
375
400
ID
S
(
m
A
)
POUT
GAIN
IDS
18
19
20
21
22
23
24
25
26
27
28
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
Frequency (GHz)
Ou
tp
u
t
P
o
we
r
(
d
B
m
)
P1dB
Psat
TGA4521
Measured Data
Bias Conditions: Vd = 6 V, Idq = 175 mA
Freq = 38 GHz
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