TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-30
-20
-10
0
10
20
30
28
29
30
31
32
33
34
35
36
37
38
Frequency (GHz)
G
a
in
&
R
e
t
u
r
n
L
o
s
s
(
d
B
)
Ka Band 2W Power Amplifier TGA4514-EPU
Key Features
·
Typical Frequency Range: 31 - 35 GHz
·
33.5 dBm Nominal Psat @ Vd = 7V
·
31.5 dBm Nominal P1dB
·
IMD3: 31dBc at Pout/tone=22dBm
·
19 dB Nominal Gain
·
Bias 6 - 7 V, 1150 mA
·
0.25 um 2MI pHEMT Technology
·
Chip Dimensions 4.0 x 3.2 x 0.1 mm
(0.161 x 0.128 x 0.004) in
Primary Applications
·
Point-to-Point Radio
·
Military Radar Systems
·
Ka Band Sat-Com
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA
GAIN
IRL
ORL
28
29
30
31
32
33
34
35
30
31
32
33
34
35
36
37
Frequency (GHz)
Ps
a
t
@
Pi
n=
2
0
dB
m
(
d
B
m
)
Bias Conditions: Vd = 6/7 V, Id = 1150 mA
Vd = 7 V
Vd = 6 V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
8 V
2/
Vg
Gate Voltage Range
-5 TO 0 V
Id
Drain Current
2.5 A
2/ 3/
½Ig½
Gate Current
70 mA
3/
P
IN
Input Continuous Wave Power
27 dBm
P
D
Power Dissipation
TBD
2/ 4/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4514-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
PAR AM ETER
TYPIC AL
UNITS
Frequency Range
31 - 35
G H z
Drain Voltage, Vd
6
V
Drain C urrent, Id
1150
m A
G ate Voltage, Vg
-0.5
V
Sm all Signal G ain, S21
19
dB
Input Return Loss, S11
-7
dB
O utput Return Loss, S22
-10
dB
O utput Power @ 1 dB Com pression G ain, P1dB
31.5
dBm
Saturated Power @ Pin = 20 dBm , Psat
32.5
dBm
IM D3, Freq = 33 G H z, Pout/Tone = 22 dBm
31
dBc
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
TGA4514-EPU
TABLE II
DC PROBE TESTS
(Ta = 25
0
C, Nominal)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNITS
I
DSS,Q1
Saturated Drain Current
114
mA
G
M,Q1
Transconductance
150
mS
V
BVGS,Q1-Q6
Breakdown Voltage gate-source
-16
V
V
BVGD,Q1-Q6
Breakdown Voltage gate-drain
-16
V
V
P,Q1-Q6
Pinch-off Voltage
-1
V
Q1- Q4 are 400 um FETs, Q5 is 3200 um FET, Q6 is 4000 um FET
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
10
12
14
16
18
20
22
28
29
30
31
32
33
34
35
36
37
38
Fre que ncy (GHz)
Ga
i
n
(
d
B
)
TGA4514-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
28
29
30
31
32
33
34
35
30
31
32
33
34
35
36
37
Frequency (GHz)
Ps
a
t
@
Pi
n
=
2
0
d
B
m
(
d
B
m
)
Vd = 6 V
Vd = 7 V
Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-35
-30
-25
-20
-15
-10
-5
0
28
29
30
31
32
33
34
35
36
37
38
Freque ncy (GHz)
I
n
p
u
t Re
tu
r
n
L
o
s
s
(d
B
)
TGA4514-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
-35
-30
-25
-20
-15
-10
-5
0
28
29
30
31
32
33
34
35
36
37
38
Freque ncy (GHz)
O
u
t
put
R
e
t
u
r
n
Los
s
(
d
B
)
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