Advance Product Information
March 15, 2005
1
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
27 - 31 GHz 2W Balanced Power Amplifier TGA4513-CP
Key Features
·
27 - 31 GHz Bandwidth
·
> 32 dBm Nominal P1dB
·
33 dBm Nominal Psat
·
22 dB Nominal Gain
·
IMD3 is 32 dBc @ 18 dBm SCL
·
12 dB Nominal Return Loss
·
Bias: 6 V, 840 mA
·
Package Dimensions:
13.34 x 9.65 x 1.85 mm
(0.525 x 0.380 x 0.073 in)
Primary Applications
·
Satellite Ground Terminal
·
Point to Point Radio
·
Point to Multi Point Radio
·
LMDS
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
Product Description
The TriQuint TGA4513-CP is a compact
2 Watt High Power Amplifier Packaged
MMIC for Ka-band applications. It
provides 22 dB nominal gain and 12 dB
nominal return loss.
The TGA4513 provides a nominal 33
dBm of output power. It is a lead free
device.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals,
point to point radio and LMDS.
The TGA4513-CP is 100% RF tested to
ensure performance compliance.
Lead-Free & RoHS compliant.
Evaluation boards are available.
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
27
27.5
28
28.5
29
29.5
30
30.5
31
Frequency (GHz)
S-Par
a
meter
(d
B
)
S21
S11
S22
29
29.5
30
30.5
31
31.5
32
32.5
33
33.5
34
27
28
29
30
31
Frequency (GHz)
OutPut Power (dBm)
P1dB
Psat
Advance Product Information
March 15, 2005
2
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
7 V
2/
V
-
Negative Supply Voltage Range
-3 TO 0 V
I
+
Positive Supply Current
1.05 A
2/
I
G
Gate Supply Current
10 mA
3/
P
IN
Input Continuous Wave Power
22 dBm
P
D
Power Dissipation
6.71 W
2/ 4/
T
CH
Operating Channel Temperature
150
0
C
5/
T
M
Mounting Temperature (30 Seconds)
260
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the device.
4/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is 1.0E+6
hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TGA4513-CP
Advance Product Information
March 15, 2005
3
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
TYPICAL
UNITS
Drain Operating
6
V
Quiescent Current
840
mA
Small Signal Gain, S21
22
dB
Input Return Loss, S11
14
dB
Output Return Loss, S22
12
dB
Output Power @ 1 dB Compression Gain, P1dB
> 32
dBm
Power @ saturated, Psat
33
dBm
IMD3 @ 18 dBm SCL, at 30 GHz
32
dBc
TGA4513-CP
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
q
C)
T
JC
(
q
C/W)
T
M
(hrs)
JC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 6 V
I
D
= 0.84 A (Quiescent)
P
DISS
= 5.04 W
Tbase = 70
°
C
130.1
11.92
5.9 E+6
Advance Product Information
March 15, 2005
4
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
-35
-30
-25
-20
-15
-10
-5
0
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
S
11 (d
B)
25 degC
70 degC
-40 degC
-35
-30
-25
-20
-15
-10
-5
0
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
S
22 (dB)
25 degC
70 degC
-40 degC
0
5
10
15
20
25
30
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
S
21 (d
B)
25 degC
70 degC
-40 degC
TGA4513-CP
Advance Product Information
March 15, 2005
5
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info:
info-mmw@tqs.com
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-1
1
3
5
7
9
11
13
15
17
19
21
Pin (dBm)
PA
E(%
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
Ids
(
A
)
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
S i
6
16
18
20
22
24
26
28
30
32
34
36
-1
1
3
5
7
9
11
13
15
17
19
21
Pin (dBm)
P
out(dBm
)
10
15
20
25
30
35
Po
wer
Gai
n
(d
B
)
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
S i
6
Measured Data
Bias Conditions: Vd = 6 V, Id = 840 mA
TGA4513-CP
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