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Part Number TGA4510-SM

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Advance Product Information
November 15, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
Ka-band Compact Driver Amplifier
TGA4510-SM
Key Features
·
Typical Frequency Range: 29-31 GHz
·
17 dBm Nominal Psat
·
15 dB Nominal Gain
·
Bias Conditions: Vd = 6V, Id = 60 mA
·
Compact 4 x 4 QFN with 20 leads
·
Package Dimensions: 4.0 x 4.0 x 0.9 mm
Primary Applications
·
Ka-band VSAT Ground Terminal
·
Point-to-Point Radio
·
Base Stations
Measured Performance
Bias Conditions: Vd = 6V, Idq = 60mA
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Product Description
The TriQuint TGA4510-SM is a Ka-Band
Packaged Driver Amplifier. The
TGA4510-SM operates from 29-31 GHz
and is designed using TriQuint's proven
standard 0.25-um power pHEMT
production process.
The TGA4510-SM typically provides
17 dBm of saturated output power with
small signal gain of 15 dB.
The TGA4510-SM is available in a low-
cost, surface mount 4x4 QFN style
package and is ideally suited for Ka-
band VSAT Ground Terminal, Point-to-
Point Radio and Base Station
applications.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant.
0
2
4
6
8
10
12
14
16
18
20
29
29.5
30
30.5
31
Frequency (GHz)
G
a
i
n
(dB)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Re
tur
n
Los
s
(dB)
Gain
Input
Output
10
11
12
13
14
15
16
17
18
19
20
29
29.5
30
30.5
31
Frequency (GHz)
P
1
dB (dBm)
Advance Product Information
November 15, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
TGA4510-SM
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
8 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current (Quiescent)
81 mA
2/
| I
G
|
Gate Supply Current
3.5 mA
P
IN
Input Continuous Wave Power
18 dBm
2/
P
D
Power Dissipation
0.65 W
2/ 3/
T
CH
Operating Channel Temperature
150
°
C
4/ 5/
T
M
Mounting Temperature (30 Seconds)
260
°
C
T
STG
Storage Temperature
-65 to 150
°
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150
°
C ­ TBASE
°
C) / 117.5 (
°
C/W)
4/
These ratings apply to each individual FET.
5/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
Advance Product Information
November 15, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
Bias Conditions: Vd = 6V, Idq = 60mA
SYMBOL
PARAMETER
TEST CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 29-31 GHz
15
dB
IRL
Input Return Loss
f = 29-31 GHz
10
dB
ORL
Output Return Loss
f = 29-31 GHz
12
dB
Psat
Saturated Output Power
f = 29-31 GHz
17
dBm
P1dB
Output Power @ 1dB
Compression
f = 29-31 GHz
16
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITION
T
CH
(
q
C)
R
T
jc
(
q
C/W)
MTTF
(HRS)
R
jc
Thermal Resistance
(Channel to package)
V
D
= 6V
I
Dq
= 60mA
P
Diss
= 0.36 W
127
117.5
7.9 E+6
Note: Worst case condition with no RF applied, 100% of DC power is dissipated.
Package temperature @ 85
°
C
TGA4510-SM
Advance Product Information
November 15, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
Measured Performance
Bias Conditions: Vd = 6 V, Idq =60 mA
TGA4510-SM
0
2
4
6
8
10
12
14
16
18
20
26
27
28
29
30
31
32
33
34
35
36
Frequency (GHz)
Gain (dB)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Return Loss (dB)
Gain
Input
Output
5
6
7
8
9
10
11
12
13
14
15
16
17
18
26
27
28
29
30
31
32
33
34
35
36
Frequency (GHz)
P1dB (dBm)
Advance Product Information
November 15, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
0
2
4
6
8
10
12
14
16
18
20
-12
-10
-8
-6
-4
-2
0
2
4
6
8
Pin (dBm)
Pout (dBm)
29GHz
30GHz
31GHz
32GHz
33GHz
34GHz
35GHz
TGA4510-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq =60 mA
-50
-45
-40
-35
-30
-25
-20
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
Output Power/tone (dBm)
IMD3
(
d
Bc
)
28 GHz
30 GHz
32 GHz
34 GHz
36 GHz