Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
1
Ku Band 2 Watt Packaged Amplifier TGA2510-EPU-SG
Key Features and Performance
·
33.5 dBm Midband Psat
·
25 dB Nominal Gain
·
7 dB Typical Input Return Loss
·
10 dB Typical Output Return Loss
·
12.5 - 17 GHz Frequency Range
·
Directional Power Detector with
Reference
·
0.25µm pHEMT 3MI Technology
·
Bias Conditions: 7.5V, 650mA
·
Package Dimensions:
9.4 x 6.4 x 1.8 mm
(0.370 x 0.250 x 0.071 inches)
Preliminary Measured Performance
Bias Conditions: Vd=7.5V Id=650mA
Primary Applications
·
VSAT
·
Point to Point
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S
21 (
d
B)
-20
-15
-10
-5
0
5
10
S
11,S
22 (
d
B)
S21
S11
S22
26
27
28
29
30
31
32
33
34
35
36
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Pout @
Pin=+14dBm
(dBm
)
10
15
20
25
30
35
40
45
50
55
60
PAE @
Pin
=
+
14d
Bm (
%
)
Pout
PAE
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
2
TGA2510-EPU-SG
TABLE I
MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
D
Drain Voltage
8 V
1/ 2/
V
G
Gate Voltage Range
-5V to 0V
1/
I
D
Drain Supply Current (Quiescent)
1300 mA
1/ 2/
| I
G
|
Gate Supply Current
18 mA
1/
P
IN
Input Continuous Wave Power
24 dBm
1/ 2/
P
D
Power Dissipation
6.15 W
1/ 2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
at a package base temperature of 70
°C
3/ When operated at this bias condition with a baseplate temperature of 70
°C, the
MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to
failure (MTTF). For maximum life, it is recommended that junction temperatures
be maintained at the lowest possible levels.
TABLE II
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
°C)
R
QJC
(
°C/W)
MTTF
(hrs)
R
QJC
Thermal Resistance
(Channel to Backside of
Package)
V
D
= 7.5V
I
D
= 650mA
P
DISS
= 4.88W
T
BASE
= 70
°C
132.3
12.8
4.8E+6
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
3
TGA2510-EPU-SG
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
°C, Nominal)
(Vd = 7.5V, Id = 650mA
±5%)
Symbol
Parameter
Test Conditions
Typ
Units Notes
Gain
Small Signal Gain
F = 12.5 16 GHz
25
dB
IRL
Input Return Loss
F = 12.5 16 GHz
7
dB
ORL
Output Return Loss
F = 12.5 16 GHz
10
dB
PWR
Output Power @
Pin = +14dBm
F = 12.5 16 GHz
33.5
dBm
PAE
Power Added Efficiency @
Pin = +14dBm
F = 12.5 16 GHz
29
%
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
4
Typical Fixtured Performance
Id=650mA
TGA2510-EPU-SG
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S21 (dB)
Vd=5V
Vd=7.5V
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S11 (dB)
Vd=5V
Vd=7.5V
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
5
TGA2510-EPU-SG
Typical Fixtured Performance
Id=650mA
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S22 (dB)
Vd=5V
Vd=7.5V
-70
-60
-50
-40
-30
-20
-10
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S12 (dB)
Vd=5V
Vd=7.5V
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
6
TGA2510-EPU-SG
Typical Fixtured Performance
Id=650mA
26
27
28
29
30
31
32
33
34
35
36
37
11
12
13
14
15
16
17
18
19
Frequency (GHz)
P
out @
P
i
n=+14dBm (dBm)
10
15
20
25
30
35
40
45
50
55
60
65
PAE @ Pin=+14dBm (%)
Pout Vd=7.5V
Pout Vd=5V
PAE Vd=7.5V
PAE Vd=5V
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
7
TGA2510-EPU-SG
Typical Fixtured Performance
Id=800mA
-30
-24
-18
-12
-6
0
6
12
18
16
18
20
22
24
26
28
Output Power/Tone (dBm)
IMD3 (dBm)
12.5 GHz
13.5 GHz
14.5 GHz
15.5 GHz
30
31
32
33
34
35
36
37
38
39
40
12
13
14
15
16
17
18
Frequency (GHz)
Average TOI (dBm)
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
8
Package Pinout Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2510-EPU-SG
V
REF
RF IN
VG
VD
RF OUT
V
DET
RF IN
VG
VD
RF OUT
10
W
1
mF
10
W
1
mF
Package Assembly Diagram
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
9
Mechanical Drawing
0.010
0.020
ref (2)
0.030
R=0.010
2 pl
0.060
typ
0.006
Top View
Side View
0.250 sq
0.012 typ
0.160 typ
CL
0.060, 6 pl
Dimensions in inches
TGA2510-EPU-SG
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
10
Recommended PWB Land Pattern
0.000
0.006
- 0.006
0.070
0.090
- 0.070
- 0.090
0.119
- 0.119
0.000
0.119
0.145
0.195
- 0.119
- 0.145
- 0.195
RF in
RF out
Dimensions in inches
GND / Thermal Vias
Vd
Vg
TGA2510-EPU-SG
Advance Product Information
October 30, 2003
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
11
40K
W
40K
W
+5V
Vdet
Vref
50
W
RF out
DUT
5pF
Package
External
Power Detector
TGA2510-EPU-SG
TGA2510 Power Detector @ 14GHz
0
0.1
0.2
0.3
0.4
0.5
0.6
14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Vref-Vdet (V)
PDF 
ZIP