TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
10
15
20
25
30
35
12
13
14
15
16
17
18
19
Frequency (GHz)
P1
d
B
(
d
B
m
)
Ku-Band VSAT Packaged Amplifier TGA2508-EPU-SM
Key Features
·
Typical Frequency Range: 12 - 19 GHz
·
25 dB Nominal Gain
·
29 dBm Nominal P1dB
·
Bias Conditions: 7 V, 433 mA
·
PHEMT Technology
·
Low cost true surface mount package
·
Package Dimensions:
4.0 x 4.0 x 0.9 mm
(0.157 x 0.157 x 0.035 in)
Primary Applications
·
VSAT Ground Terminals
·
Point to Point Radio
·
Military Ku Band
·
Ku-Band Space
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
GAIN
Top View
Bottom View
-40
-30
-20
-10
0
10
20
30
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz
)
S
-
Pa
ra
m
e
te
r (
d
B
)
ORL
IRL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
4/
V
-
Negative Supply Voltage Range
-2 to 0 V
I
+
Positive Supply Current (Quiescent)
591 mA
4/
| I
G
|
Gate Supply Current
16 mA
P
IN
Input Continuous Wave Power
17 dBm
P
D
Power Dissipation
4.7 W
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature (30 Seconds)
250
0
C
T
STG
Storage Temperature
-65 to 150
0
C
T
CASE
Package Operating Temperature
-40 to 110
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
4.3E+6 hrs.
4/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TGA2508-EPU-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU-SM
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C)
PARAMETER
TYPICAL
UNITS
Frequency Range
12 - 19
GHz
Drain Operating
7
V
Quiescent Current
433
mA
Small Signal Gain
25
dB
Input Return Loss (Linear Small Signal)
15
dB
Output Return Loss (Linear Small Signal
7
dB
Output Power @ 1 dB Compression Gain
29
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(Channel to Case)
Vd = 7 V
I
D
= 433 mA
Pdiss = 3.031 W
111
13.5
3.8 E+7
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature @ 70
O
C
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU-SM
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
10
12
14
16
18
20
22
24
26
28
30
32
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
G
a
in
(
d
B
)
5V
6V
7V
22
23
24
25
26
27
28
29
30
31
32
12
13
14
15
16
17
18
19
Frequency (GHz)
P1dB
(
d
Bm
)
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TGA2508-EPU-SM
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
In
pu
t R
e
tu
r
n
L
o
s
s
(d
B
)
-40
-35
-30
-25
-20
-15
-10
-5
0
10
11
12
13
14
15
16
17
18
19
20
Frequ ency (GHz)
O
u
t
p
u
t
Re
t
u
rn
L
o
s
s
(
d
B
)
5V
6V
7V
5V
6V
7V
PDF 
ZIP