TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 21, 2003
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
13 - 15 GHz 4W Power Amplifier
TGA2502-EPU
Key Features
·
0.5 um pHEMT Technology
·
>25 dB Nominal Gain
·
>36 dBm Nominal Psat
·
44 dBm Nominal IP3 @ 14 GHz
·
Bias 7V @ 1.3A Idq
·
Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Primary Applications
·
Ku-Band VSAT Transmit
Fixtured Measured Performance
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
Bias Conditions: Vd = 7V, Idq = 1.3A
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
Bias Conditions: Vd = 7V, Idq = 1.3A
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
Pout (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 21, 2003
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2502-EPU
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C)
TABLE I
MAXIMUM RATINGS 1/
Symbo
l
Parameter
Value
Notes
V
+
Positive Supply Voltage
8V
I
+
Positive Supply Current
1.7 A
2/
P
D
Power Dissipation
TBD
P
IN
Input Continuous Wave Power
24 dBm
T
CH
Operating Channel Temperature
150
°
C
3/, 4/
T
M
Mounting Temperature (30
seconds)
320
°
C
T
STG
Storage Temperature
-65
°
C to 150
°
C
1/
These values represent the maximum operable values of this device
2/
Total current for the entire MMIC
3/
These ratings apply to each individual FET
4/
Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
Pa ra me te r
Units
Typica l
Drain Operating Voltage
V
7
Quiescent Current
A
1.3
Small Signal Gain
dB
25.00
Gain Flatness (Freq = 13.5 - 15 GHz)
dB/100MHz 0.1000
Input Return Loss (Linear Small Signal)
dB
-16.00
Output Return Loss (Linear Small Signal)
dB
-16.00
Reverse Isolation
dB
<-50
CW Output Power @Psat at 14.5GHz
dBm
36.0
Power Add Efficiency@PsatdB
%
30
P1dB temperature coeff. TC ( -40 to + 70 °C)
dB/deg C
0.0442
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 21, 2003
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2502-EPU
Measured Fixtured Data
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
Pout (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 21, 2003
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2502-EPU
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
11 (dB)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
22 (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 21, 2003
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2502-EPU
Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
30
33
36
39
42
45
48
10
15
20
25
30
35
Fundamental output power per tone (dBm)
TOI (dBm)
13 GHz
13.5 Ghz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
Measured Fixtured Data
0
10
20
30
40
50
60
70
10
15
20
25
30
35
Fundamental output power per tone (dBm)
IMD3
(
d
Bc
)
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
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