TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
1
13 - 15 GHz 4W Power Amplifier
TGA2502
Key Features
·
0.5 um pHEMT Technology
·
>25 dB Nominal Gain
·
>36 dBm Nominal Psat
·
44 dBm Nominal IP3 @ 14 GHz
·
Bias 7V @ 1.3A Idq, 2.1A under RF drive
·
Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Primary Applications
·
Ku-Band VSAT Transmit
Fixtured Measured Performance
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
Bias Conditions: Vd = 7V, Idq = 1.3A
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
,
q
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
P
out (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
Bias Conditions: Vd = 7V, Idq = 1.3A
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
2
TGA2502
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
8V
I
+
Positive Supply Current
2.3 A
2/
P
D
Power Dissipation
TBD
P
IN
Input Continuous Wave Power
24 dBm
T
CH
Operating Channel Temperature
150
°
C
3/, 4/
T
M
Mounting Temperature (30 seconds)
320
°
C
T
STG
Storage Temperature
-65
°
C to 150
°
C
1/
These values represent the maximum operable values of this device
2/
Total current for the entire MMIC
3/
These ratings apply to each individual FET
4/
Junction operating temperature will directly affect the device mean time to failure (MTTF). For
maximum life it is recommended that junction temperatures be maintained at the lowest
possible levels
.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
3
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C
)
PARAMETER
TYPICAL
UNITS
Drain Operating Voltage
7
V
Quiescent Current
1.3
A
Small Signal Gain
25
dB
Gain Flatness (Freq=13.5 15 GHz)
0.1
dB/100MHz
Input Return Loss (Linear Small Signal)
16
dB
Output Return Loss (Linear Small Signal)
16
dB
Reverse Isolation
<-50
dB
CW Output Power @ Psat at 14.5Ghz
36
dBm
Power Add Efficiency @ Psat
30
%
P1dB Temperature Coeff. TC (-40 to + 70
0
C)
-0.01
dB/
0
C
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.3 A
Pdiss = 9.1 W
123
5.8
1.2E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
4
Measured Fixtured Data
10
15
20
25
30
35
40
0
3
6
9
12
15
18
Pin (dBm)
Pout (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
-10
-5
0
5
10
15
20
25
30
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Ga
in (
d
B
)
Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
5
Measured Fixtured Data
Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
11 (dB)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
8
10
12
14
16
18
20
22
Frequency (GHz)
S
22 (dB)
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
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Bias Conditions: Vd = 7V, Idq = 1.3A ± 5%
30
33
36
39
42
45
48
10
15
20
25
30
35
Fundamental output power per tone (dBm)
TOI (dBm)
13 GHz
13.5 Ghz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
Measured Fixtured Data
0
10
20
30
40
50
60
70
10
15
20
25
30
35
Fundamental output power per tone (dBm)
IMD3
(
d
Bc
)
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
7
·
AuSn Vacuum Re-flow
Assembly Note:
Chip & Assembly Diagram
VD
VD
VG
1
PF
PS
1
PF
470
PF
10
PS
RF IN
RF OUT
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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February 7, 2006
8
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2502
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
February 7, 2006
9
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
·
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
0
C (30 seconds max).
·
An alloy station or conveyor furnace with reducing atmosphere should be used.
·
No fluxes should be utilized.
·
Coefficient of thermal expansion matching is critical for long-term reliability.
·
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
·
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
·
Air bridges must be avoided during placement.
·
The force impact is critical during auto placement.
·
Organic attachment can be used in low-power applications.
·
Curing should be done in a convection oven; proper exhaust is a safety concern.
·
Microwave or radiant curing should not be used because of differential heating.
·
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
·
Thermosonic ball bonding is the preferred interconnect technique.
·
Force, time, and ultrasonics are critical parameters.
·
Aluminum wire should not be used.
·
Maximum stage temperature is 200
0
C.
TGA2502
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