0.25-µm mmW pHEMT 2MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 1 of 6; 9/24/02
Specifications are subject to change.
Features
·
0.25-µm amplifier transistors
·
0.25-µm switch transistors
·
0.25-µm diodes
·
Device passivation
·
High-Q passives
·
MIM capacitors
·
TaN resistors
·
GaAs resistors
·
2 metal layers
·
Air bridges
·
Substrate vias
·
Operation up to V
d
= 7 V
Applications
·
Up to 50 GHz
·
Communications
·
Space
·
Military
·
Power amplifiers
·
Driver amplifiers
·
Low-noise amplifiers
·
AGC amplifiers
·
Limiting amplifiers
·
Transimpedance amplifiers
·
Differential amplifiers
·
Digital and analog phase shifters
·
Digital and analog attenuators
·
Mixers (up and down converters)
·
Point-to-point radio
·
Point-to-multipoint radio
·
Multipliers
·
Switches
·
Oscillators
General Description
The 0.25-µm mmW pHEMT 2MI (2-metal-interconnect)
process utilizes T-gate depletion-mode transistors and is
optimized for high-power and low-noise applications
through 50 GHz. Passives include 2 thick-metal intercon-
nect layers, precision TaN resistors, GaAs resistors, MIM
capacitors and through-substrate vias. The via-under-cap
process aids in size compaction and offers excellent
grounds at higher frequencies. Air bridges produce minimal
interconnect capacitance. This process is suitable for com-
mercial, military and space applications.
4.6 µm PLATING
CAP TOP PLATE
2000 Å NITRIDE
0.75 µm FIRST METAL
TaN RESISTOR
T-GATE
ACTIVE REGION
OHMIC METAL (EXCEPT VIA)
SEMI-INSULATING GaAs SUBSTRATE
VIA UNDER CAP
0.25-µm 2MI Process Cross Section
0.25-µm mmW pHEMT 2MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 2 of 6; 9/24/02
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
DC Characteristics
200-µm FET
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0
2
4
6
8
10
12
Vds (V)
Ids (A)
Vgs = 0.7 V
Vgs = 0.3 V
Vgs = 0 V
Vgs = -0.3 V
Vgs = -0.7 V
Vgs = -0.9 V
Element
Parameter
Typical Value
Units
FETs
I
dss
285
mA/mm
I
max
510
mA/mm
G
m
375
mS/mm
V
bd
-17
V
V
p
-1
V
F
t (peak)
65
GHz
MIM capacitors
density
300
pF/mm
2
Capacitors over vias
yes
TaN resistors
sheet resistance
50
V
/sq
GaAs resistors
sheet resistance
160
V
/sq
Vias
yes
Substrate
thickness
100
µm
0.25-µm mmW pHEMT Process Details
0.25-µm mmW pHEMT 2MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 3 of 6; 9/24/02
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
Minimum Noise Figure
200-µm FET @ 3 Volts, 15 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
Frequency (GHz)
NFmin (dB)
0.25-µm mmW pHEMT 2MI
Maximum Available Gain/Stable Gain (MAG/MSG)
600-µm FET @ 6 Volts, 60 mA
0
5
10
15
20
25
0
10
20
30
40
50
Frequency (GHz)
MAG/MSG (dB)
0
0.2
0.4
0.6
0.8
1
1.2
Stability Factor (K)
0.25-µm mmW pHEMT 2MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
Power Tuned Load
600-µm FET @ 6 Volts, 30 GHz
15
20
25
30
10
15
20
25
Pin (dBm)
Pout (dBm)
10
20
30
40
PAE (%)
0.25-µm mmW pHEMT 2MI
Efficiency Tuned Load
600-µm FET @ 6 Volts, 30 GHz
15
20
25
30
10
15
20
25
Pin (dBm)
Pout (dBm)
10
20
30
40
PAE (%)
0.25-µm mmW pHEMT 2MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 5 of 6; 9/24/02
Specifications are subject to change.
Application Examples
17 to 27 GHz High Power Amplifier TGA4502-EPU:
This high-power amplifier is used primarily for K-band satellite communications and point-to-point
radio. It has 29 dBm nominal output power at 1-dB gain compression and 37 dBm nominal output
TOI.
28 to 31 GHz Ka Band High-Power Amplifier TGA4501-EPU:
This power amp has 34.5 dBm nominal output power at 1-dB gain compression and 40 dBm typi-
cal output TOI. It is used in satellite ground terminals and point-to-point radios.
36 to 40 GHz 1 Watt Power Amplifier TGA1171-SCC:
The Ka-band high-power amplifier is a two-stage power amplifier for point-to-point digital radio
and point-to-multipoint systems.
26 to 35 GHz Medium Power Amplifier TGA1073A-SCC:
This medium-power amplifier provides 25 dBm nominal output power at 1-dB gain compression
across 26 to 35 GHz. Typical small-signal gain is 19 dB. The TGA1073A is designed to support a
variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS.
Gate Pitch (µm) Gate Fingers FET Sizes (µm)
12 18
4
100, 200 & 300
12 18
8
400
12 18
10
600
12 18
12
900
20 20
4
100, 200 & 300
20 20
8
400
20 20
10
600
20 20
12
900
25 40
12
1200
26 26
4
300
26 26
8
600
FET Models Available
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