TPD1028BS
2002-10-24
1
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC
TPD1028BS
Low-Side Switch for Motors, Solenoids, and Lamp Drivers
TPD1028BS is a monolithic power IC for low-side switch. The IC
has a vertical MOSFET output which can be directly driven from
a CMOS or TTL logic circuit (e.g., an MPU). The IC offers
intelligent self-protection functions.
Features
l A monolithic power IC with a new structure combining a
control block and a vertical power MOSFET (-MOS) on a
single chip.
l Can directly drive a power load from a CMOS or TTL logic.
l Built-in Protection circuits against overvoltage, load short
circuiting, and thermal shutdown.
l Low on-resistance. R
DS (ON)
= 0.25 (max) (@V
IN
= 5 V, T
j
=
25°C)
l Package TO-92(MOD) can be packed in tape.
Pin Assignment
Note:
That because of its MOS structure, this product is sensitive to static electricity.
Weight: 0.36 g (typ.)
TPD1028BS
2002-10-24
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Block Diagram
Pin Description
Pin No.
Symbol
Pin Description
1 IN
Input pin.
This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited,
outputcan never be turned on inadvertently.
2 OUT
Output pin.
If an inrush current flows (e.g., from a lamp), the current is clamped at 10 A (typ.) by an overcurrent
protective circuit. Also, a 150 µs (typ.) mask circuit is included internally, so that if V
DS
12 V (typ.) after this
mask time, the current is clamped at 3 A (typ.).
3 GND
Ground
pin.
Timing Chart
TPD1028BS
2002-10-24
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Electrical Characteristics
(T
j
= 25°C)
Characteristic Symbol
Test
Cir-
cuit
Test Condition
Min
Typ.
Max
Unit
Drain-source breakdown
voltage
V
(BR) DSS
V
IN
= 0 V, I
D
= 10 mA
40
V
Operating supply voltage
V
DD
38 V
V
IH(1)
V
DS
= 24 V, I
D
= 1 A
4.5
5
5.5
V
IH(2)
V
DS
= 10 V, I
D
= 0.75 A
3.9
5
5.7
High level input voltage
V
IH(3)
V
DS
= 38 V, I
D
= 0.75 A
3.9
5
5.7
V
V
IL(1)
V
DS
= 24 V, I
D
= 10 µA
0.8
V
IL(2)
V
DS
= 10 V, I
D
= 10 µA
0.8
Low level input voltage
V
IL(3)
V
DS
= 38 V, I
D
= 10 µA
0.8
V
I
DSS(1)
V
IN
= 0 V, V
DS
= 40 V
100
Current at output off
I
DSS(2)
V
IN
= 0 V, V
DS
= 24 V
10
µA
Input current
I
IN
V
IN
= 5 V,
at normal operation
300
µA
On resistance
R
DS(ON)
V
IN
= 5 V, I
D
= 1 A
0.25
Thermal shutdown temperature
T
S
V
IN
= 5 V
160 °C
I
S(1)
V
DS
= 24 V, V
IN
= 5 V,
during inrush
10
Overcurrent protection
I
S(2)
V
DS
= 24 V, V
IN
= 5 V,
when shorted load
3
A
Shorted load detection
voltage
V
DS
when shorted load
12 V
t
ON
70
Switching time
t
OFF
1
V
DS
= 24 V, V
IN
= 5 V,
R
L
= 24
120
µs
Diode forward voltage
between drain and source
V
DSF
I
F
= 1.5 A
0.9 1.8 V
Test Circuit 1
TPD1028BS
2002-10-24
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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000707EBA
RESTRICTIONS ON PRODUCT USE
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