TPCS8006
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
TPCS8006
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
· Low drain-source ON resistance: R
DS (ON)
= 0.8 (typ.)
· High forward transfer admittance: |Y
fs
| = 1.6 S (typ.)
· Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 250 V)
· Enhancement model: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
250 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
250 V
Gate-source voltage
V
GSS
±20 V
DC (Note
1)
I
D
1.1
Drain current
Pulse (Note 1)
I
DP
4.4
A
Drain power dissipation (t = 10 s)
(Note
2a)
P
D
1.5
Drain power dissipation (t = 10 s)
(Note
2b)
P
D
0.6
W
Single pulse avalanche energy (Note3)
E
AS
0.07
mJ
Avalanche current
I
AR
1.1
A
Repetitive avalanche energy
(Note2a, Note 4)
E
AR
0.15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150 °C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1.2.3. Gate
4 Source
5.6.7.8 Drain
JEDEC
JEITA
TOSHIBA 2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPCS8006
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R
th (ch-a)
83.3
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R
th (ch-a)
208
°C/W
Marking
(Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 50 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 1.1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: on lower right of the marking indicates Pin 1.
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
(b)
FR-4
25.4
× 25.4 × 0.8
(unit:
mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(unit:
mm)
S8006
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
TPCS8006
2004-07-06
3
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
±10
µA
Drain cut-OFF current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
100 µA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
250
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.5
3.5 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 0.5 A
0.8 1.0
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 0.5 A
0.7 1.6
S
Input capacitance
C
iss
380 pF
Reverse transfer capacitance
C
rss
32 pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
105 pF
Rise time
t
r
11
Turn-ON time
t
on
20
Fall time
t
f
15
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 µs
45
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
11 nC
Gate-source charge
Q
gs
7 nC
Gate-drain ("miller") charge
Q
gd
V
DD
- 200V, V
GS
= 10 V,
I
D
= 1.1 A
4 nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current (pulse)
(Note 1)
I
DRP
4.4 A
Forward voltage (diode)
V
DSF
I
DR
= 1.1 A, V
GS
= 0 V
-2.0 V
Reverse recovery time
t
rr
100 ns
Reverse recovery charge
Q
rr
I
DR
= 1.1 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/µs
320 nC
R
L
=
200
V
DD
- 100 V
0 V
V
GS
10 V
4.
7
I
D
= 0.5 A
V
OUT
TPCS8006
2004-07-06
4
· The information contained herein is subject to change without notice.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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