TPCF8103
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOS)
NOTE BOOK PC APPLICATIONS
PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm
Low Drain - Source ON Resistance
()
72(Typ.)
High Forward Transfer Admittance
6 S(Typ.)
Low Leakage Current
-10(Max.) (
-20)
Enhancement - Mode
-0.5 -1.2(
-10,
-200
µ
)
MAXIMUM RATINGSTa25
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain - Source Voltage
-20
Drain - Gate Voltage
(
20)
-20
Gate - Source Voltage
±8
DC (Note1)
-2.7
Drain Current
Pulse (Note1)
-10.8
Drain Power Dissipation (t=5s)
(Note2a)
2.5
Drain Power Dissipation (t=5s)
(Note2b)
0.7
Single Pulse Avalanche Energy(Note3)
1.2
Avalanche Current
-1.35
Repetitive Avalanche Energy (Note4)
0.25
Channel Temperature
150
Storage Temperature Range
-55150
Circuit Configuration
THERMAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
MAX. UNIT
Thermal Resistance, Channel to
Ambient (t=5s) (Note2a)
(-)
50.0
Thermal Resistance, Channel to
Ambient (t=5s) (Note2b)
(-)
178.6
Note1, Note2, Note3, Note4, Note5 Please see next page.
THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
TOSHIBA
1. Drain
2. Drain
3. Gat
4. Source
5. Drain
6 Drain
0.05
±
0.05
1.6 -
0
.1
0.7
±
0.05
0.05
2.9±0.2
2.8 -
0
.3
0.3±0.1
0.95
0.16
±
0.05
0.25 -0.15
+0.25
1
4
3
6
+0.2
+0.2
0.95
1DRAIN 5SOURCE
2DRAIN 6DRAIN
3DRAIN 7DRAIN
4GATE
8DRAIN
2.9±0.1
0.3
+0.1-0.05
1.
5
±
0.
1
1.
9
±
0.
1
0.65
0.8±0.05
1
1
1
1
4
4
4
4
5
5
5
5
8
8
8
8
0.
24
0.
10
-
0.
09
0.47
0.025 M A
A
S
0.05 S
0.
71 +
0
.
05
-
0.
15
0.
71 +
0
.
05
-
0.
15
TPCF8103
ELECTRICAL CHARACTERISTICSTa25
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Gate Leakage Current
±8
0
-
-
±10
Drain Cut-off Current
-20
0
-
-
-10
()
-10
0
-20
-
-
Drain-Source Breakdown
Voltage
()
-10
8
-8
-
-
Gate Threshold Voltage
-10
-200
µ
-0.5
-
-1.2
-1.8
-1.4
-
215
300
-2.5
-2.8
-
110
160
Drain-Source ON Resistance
()
-4.5
-2.8
-
72
110
m
Forward Transfer Admittance
-10
-2.8
3.0
6.0
-
Input Capacitance
-
470
-
Reverse Transfer Capacitance
-
70
-
Output Capacitance
-10
0
1
-
80
-
Rise Time
-
5
-
Turn-on Time
-
9
-
Fall Time
-
8
-
Switching
Time
Turn-off Time
-
26
-
Total Gate Charge (Gate-Source
Plus Gate-Drain)
-
6
-
Gate-Source Charge
-
4.5
-
Gate-Drain("Miller")Charge
-16
-5
-2.7
-
1.5
-
SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICSTa25
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Pulse Drain Reverse Current
(Note1)
-
-
-
-10.8
Diode Forward Voltage
-2.7
0
-
-
1.2
Note1 Please use devices on condition that the channel temperature is below 150.
Note2:
(a) Device mounted on glass-epoxy board (a) (b) Device mounted on glass-epoxy board (b)
FR-4 FR-4
25.4×25.4×0.8 25.4×25.4×0.8
(Unit in mm) (Unit in mm)
(a) (b)
Note3: V
DD
=-16V, Tch=25(initial), L=0.5mH, R
G
=25, I
AR
=-1.35A
Note4: Repetitive rating ; Pulse Width Limited by Max. Channel Temperature.
R
L
=7.14
VOUT
V
DD
-10V
I
D
=-1.4A
0V
V
GS
-5V
Duty1%,tw=10us
4.7
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