TPC8210
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8210
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
l Low drain-source ON resistance: R
DS
(ON)
= 11 m (typ.)
l High forward transfer admittance: |Y
fs
| = 13 S (typ.)
l Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 30 V)
l Enhancement-mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
30 V
Gate-source voltage
V
GSS
±20 V
D C
(Note 1)
I
D
8
Drain current
Pulse (Note
1) I
DP
32
A
Single-device
operation
(Note
3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note
3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note
4)
E
AS
83.2 mJ
Avalanche current
I
AR
8 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.1 mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPC8210
2003-02-18
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
114
Single-device operation
(Note 3a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
278
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 24 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 8 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
· on lower left of the marking indicates Pin 1.
FR-4
25.4
´ 25.4 ´ 0.8
(unit: mm)
(a)
FR-4
25.4
´ 25.4 ´ 0.8
(unit: mm)
(b)
Type
TPC8210
Lot No.
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPC8210
2003-02-18
3
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V
, V
DS
= 0 V
--
±10
µA
Drain cut-OFF current
I
DSS
V
DS
= 30 V
, V
GS
= 0 V
10 µA
V
(BR) DSS
I
D
= 10 mA
, V
GS
= 0 V
30
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
, V
GS
=
-20 V
15
¾
¾
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
1.3
2.5 V
R
DS (ON)
V
GS
= 4.5 V,
I
D
= 4 A
¾ 13 20
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 4 A
11 15
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V,
I
D
= 4 A
6.5 13 S
Input capacitance
C
iss
3530
Reverse transfer capacitance
C
rss
495
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
580
pF
Rise time
tr
26
Turn-ON time
t
on
39
Fall time
t
f
32
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 ms
115
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
75
Gate-source charge
Q
gs
6
Gate-drain ("miller") charge
Q
gd
V
DD
24 V, V
GS
= 10 V, I
D
= 8 A
19
nC
Source-Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
32
A
Forward voltage (diode)
V
DSF
I
DR
= 8 A, V
GS
= 0 V
-- -- -1.2
V
R
L
=
3.
7
W
V
DD
~
- 15 V
0 V
V
GS
10 V
4.
7
W
I
D
= 4 A
V
OUT
TPC8210
2003-02-18
4
0
20
0
0.5
1 1.5
4
4
8
12
16
Common source
VDS = 10 V
Pulse test
2
3
25
100
Ta
= -55°C
2.5 2.5
I
D
V
DS
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
I
D
V
DS
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
I
D
V
GS
Gate-source voltage V
GS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
V
DS
V
GS
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate-source voltage V
GS
(V)
|Y
fs
| I
D
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
ï
Y
fs
ï
(
S
)
Drain current I
D
(A)
0.1 1 10 100
0.1
1
10
100
Common source
VDS = 10 V
Pulse test
Tc
= 100°C
-55°C
25°C
R
DS (ON)
I
D
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (ON)
(m
W
)
1
3
30 100
Common source
Ta
= 25°C
Pulse test
1
10
100
VGS = 10 V
VGE = 4.5 V
3
30
10
0.4
0.6 0.8 1.0
0
4
6
8
10
2
0
0.2
VGS = 2.2 V
2.3
2.4
2.5
2.6
2.7
2.8
3
2.9
6
8
10
Common source
Ta
= 25°C
Pulse test
4
6
8
10
0 1 2 3 4 5
0
4
8
12
16
20
VGS = 2.3 V
2.7
2.9
2.8
2.4
2.6
2.5
3
Common source
Ta
= 25°C
Pulse test
0
4
8
20
0
0.6
1
0.8
0.2
0.4
ID = 2A
8
Common source
Ta
= 25°C
Pulse test
12 16
4
TPC8210
2003-02-18
5
R
DS (ON)
Ta
Ambient temperature Ta (°C)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(
O
N)
(
W
)
I
DR
V
DS
Drain-source voltage V
DS
(V)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
Capacitance V
DS
Drain-source voltage V
DS
(V)
C
apaci
t
anc
e C
(p
F)
0.1 1 10 100
10
100
1000
10000
Crss
Coss
Ciss
Common source
VGS = 10 V
ID = 1 mA
Pulse test
V
th
Ta
Ambient temperature Ta (°C)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
P
D
Ta
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Ambient temperature Ta (°C)
0
0
0.5
1.0
1.5
2
50 100
150 200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t
= 10 s
(1)
(2)
(3)
(4)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
-80
-40 0 40
80
160
120
0
5
10
25
15
20
Common source
Pulse test
VGS = 4.5 V
ID = 8, 4, 2 A
10 V
ID = 8, 4, 2 A
-80
-40
0
40
80 120 140
Common source
V
DS
= 10 V
f
= 1 mA
Pulse test
0
1
3
2
0.5
1.5
2.5
1
10
0
-0.4
-0.6
-0.8
-1.2
-0.2
100
-1
3
1
5
VGS = 0 V
Common source
Ta
= 25°C
Pulse test
0
20
40
60 80 100
0
15
10
20
30
5
25
0
15
10
20
30
5
25
Common source
Ta
= 25°C
I
D
= 8 A
Pulse test
12
VDS
VDD = 24 V
12
6
VDD = 24 V
6
TPC8210
2003-02-18
6
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Safe operating area
0.01
0.01 0.1 1
10 100
0.1
1
10
100
* Single pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pluse) *
10 ms*
1 ms*
VDSS max
Pulse width t
w
(S)
r
th
- t
w
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
herm
a
l
i
m
pe
danc
e
r
th
(
°
C
/
W
)
0.1
0.001 0.01 0.1
1
10 100 1000
1
10
100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t
= 10 s
(4)
(3)
(2)
(1)
Single pulse
TPC8210
2003-02-18
7
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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