ChipFind - Datasheet

Part Number TIM8596-15

Download:  PDF   ZIP
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM8596-15
TECHNICAL DATA
PRELIMINARY
FEATURES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED
P1dB=42.0dBm at 8.5GHz to 9.6GHz
n
HIGH GAIN
G1dB=7.0dB at 8.5GHz to 9.6GHz
n
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P
1dB
dBm
41.0
42.0
Power Gain at 1dB
Compression Point
G
1dB
dB
6.0
7.0
Drain Current
I
DS
A
4.5
5.5
Power Added Efficiency
add

V
DS
= 9
V
f
= 8.5 ­ 9.6GHz
%
31
Channel Temperature Rise
Tch
VDS
×
IDS
×
Rth(c-c)
°
C
100
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN.
TYP. MAX.
Transconductance
gm
V
DS
=
2V
I
DS
= 4.8A
mS
3000
Pinch-off Voltage
V
GSoff
V
DS
=
2V
I
DS
= 145mA
V
-1.5
-3.0
-4.5
Saturated Drain Current
I
DSS
V
DS
= 3
V
V
GS
= 0V
A
10.0
11.5
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -145
µ
A
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
2.0
2.5





u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
2
TIM8596-15
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
V
DS
V
15
Gate-Source Voltage
V
GS
V
-5
Drain Current
I
DS
A
11.5
Total Power Dissipation (Tc= 25
°
C)
P
T
W
60
Channel Temperature
T
ch
°
C
175
Storage
T
stg
°
C
-65
+175
PACKAGE OUTLINE (2-11C1B)





Unit in mm
·
Gate
,
Source
Drain




HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260
°
C.
11.0 MAX.
0.2

MAX.
1.7
±
0.3
0.1
-0.05
+0.1
2.6
±
0.3
5.0

MAX.
·
,
,
0.6
±
0.15
17.0
±
0.3
21.5 MAX..
12.9
±
0.2
3.2
±
0.3
2.0

MIN.
2.0

MIN.
4-R3.0