MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE
MICROWAVE
MICROWAVE
MICROWAVE SEMICONDUCTOR
SEMICONDUCTOR
SEMICONDUCTOR
SEMICONDUCTOR
TIM7785-16UL
TIM7785-16UL
TIM7785-16UL
TIM7785-16UL
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
FEATURES
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED
P1dB=42.5dBm at 7.7GHz to 8.5GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB= 8.5dB at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
°
°
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point
P
1dB
dBm
41.5
42.5
Power Gain at 1dB
Compression Point
G
1dB
dB
7.5
8.5
Drain Current
I
DS1
A
4.4
5.0
Gain Flatness
G
dB
±
0.6
Power Added Efficiency
add
V
DS
= 10
V
f
= 7.7 8.5GHz
%
35
3rd Order Intermodulation
Distortion
IM
3
dBc
-44
-47
Drain Current
I
DS2
Two Tone Test
Po= 31.5dBm
(Single Carrier Level)
A
4.4
5.0
Channel Temperature Rise
Tch
V
DS
X
I
DS
X
R
th(c-c)
°
C
80
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
°
°
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 6.0A
mS
3600
Pinch-off Voltage
V
GSoff
V
DS
=
3V
I
DS
= 60mA
V
-1.0
-2.5
-4.0
Saturated Drain Current
I
DSS
V
DS
=
3V
V
GS
= 0V
A
10.5
14.0
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -200
µ
A
V
-5
Thermal Resistance
R
th(c-c)
Channel to Case
°
C/W
1.5
1.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000
2
TIM7785-16UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
°
°
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
V
DS
V
15
Gate-Source Voltage
V
GS
V
-5
Drain Current
I
DS
A
14
Total Power Dissipation (Tc= 25
°
C
)
P
T
W
75
Channel Temperature
T
ch
°
C
175
Storage
T
stg
°
C
-65
+175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260
°
°
°
°
C.
5.5 M
A
X.
0.2 M
A
X.
0.7
±
±
±
±
0.15
2.4
±
±
±
±
0.3
8.0
±
±
±
±
0.2
1.4
±
±
±
±
0.3
0.1
+0.1
-
0.05
2.5 M
I
N.
2.5 M
I
N.
17.4
±
±
±
±
0.4
2.6
±
±
±
±
0.3
20.4
±
±
±
±
0.3
24.5 MAX.
4
C1.0
16.4 MAX.
3
TIM7785-16UL
RF PERFORMANCES
40
40
40
40
41
41
41
41
42
42
42
42
43
43
43
43
44
44
44
44
45
45
45
45
7.4
7.4
7.4
7.4
7.6
7.6
7.6
7.6
7.8
7.8
7.8
7.8
8
8
8
8
8.2
8.2
8.2
8.2
8.4
8.4
8.4
8.4
8.6
8.6
8.6
8.6
8.8
8.8
8.8
8.8
Po (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
Frequency (GHz)
Output Power vs. Frequency
V
DS
= 10V
I
DS
4.4A
Pin= 34.0dBm
add
add
add
add
3 6
3 6
3 6
3 6
3 7
3 7
3 7
3 7
3 8
3 8
3 8
3 8
3 9
3 9
3 9
3 9
4 0
4 0
4 0
4 0
4 1
4 1
4 1
4 1
4 2
4 2
4 2
4 2
4 3
4 3
4 3
4 3
4 4
4 4
4 4
4 4
4 5
4 5
4 5
4 5
2 7
2 7
2 7
2 7
2 9
2 9
2 9
2 9
3 1
3 1
3 1
3 1
3 3
3 3
3 3
3 3
3 5
3 5
3 5
3 5
3 7
3 7
3 7
3 7
Pin ( dBm)
Pin ( dBm)
Pin ( dBm)
Pin ( dBm)
Po (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
0
0
0
0
1 0
1 0
1 0
1 0
2 0
2 0
2 0
2 0
3 0
3 0
3 0
3 0
4 0
4 0
4 0
4 0
5 0
5 0
5 0
5 0
6 0
6 0
6 0
6 0
7 0
7 0
7 0
7 0
8 0
8 0
8 0
8 0
9 0
9 0
9 0
9 0
add (%)
add (%)
add (%)
add (%)
Po
Po
Po
Po
f= 8.1GHz
V
DS
= 10V
I
DS
4.4A
Output Power vs. Input Power
4
TIM7785-16UL
0
0
0
0
20
20
20
20
40
40
40
40
60
60
60
60
80
80
80
80
100
100
100
100
0
0
0
0
40
40
40
40
80
80
80
80
120
120
120
120
160
160
160
160
200
200
200
200
Tc ()
Tc ()
Tc ()
Tc ()
P
P
P
P
T
T
T
T
(W)
(W)
(W)
(W)
POWER DISSIPATION vs. CASE TEMPERATURE
-60
-60
-60
-60
-50
-50
-50
-50
-40
-40
-40
-40
-30
-30
-30
-30
-20
-20
-20
-20
27
27
27
27
29
29
29
29
31
31
31
31
33
33
33
33
35
35
35
35
37
37
37
37
IM
IM
IM
IM
3
3
3
3
(dBc)
(dBc)
(dBc)
(dBc)
V
DS
= 10V
I
DS
4.4A
f= 8.1GHz
f= 5MHz
IM
3
vs. OUTPUT POWER CHARACTERISTICS
Po(dBm), Single Carrier Level
PDF 
ZIP