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Part Number SM1L43

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SM1L43
2001-07-10
1
TOSHIBA
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM1L43
AC POWER CONTROL APPLICATIONS


l Repetitive Peak Off-State Voltage : V
DRM
= 800V
l R.M.S. On-State Current
: I
T (RMS)
= 1A
MAXIMUM RATINGS
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 13-5A1E
Weight: 0.2g
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage
V
DRM
800 V
R.M.S. On-State Current
(Full Sine Waveform Tc = 74°C)
I
T (RMS)
1.0 A
8 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
8.8 (60Hz)
A
I
2
t Limit Value (t = 1~10ms)
I
2
t 0.32
A
2
s
Peak Gate Power Dissipation
P
GM
1 W
Average Gate Power Dissipation
P
G (AV)
0.1 W
Peak Gate Voltage
V
GM
6 V
Peak Gate Current
I
GM
0.5 A
Junction Temperature
T
j
-40~125 °C
Storage Temperature Range
T
stg
-40~125 °C
SM1L43
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
= 800V
10 µA
I
T2 (+) , Gate (+)
1.5
II
T2 (+) , Gate (-)
1.5
Gate Trigger Voltage
III
V
GT
V
D
=12V,
R
L
= 20
T2 (-) , Gate (-)
1.5
V
I
T2 (+) , Gate (+)
10
II
T2 (+) , Gate (-)
10
Gate Trigger Current
III
I
GT
V
D
= 12V,
R
L
= 20
T2 (-) , Gate (-)
10
mA
Peak On-State Voltage
V
TM
I
TM
= 1.5A
1.5 V
Gate Non-Trigger Voltage
V
GD
V
D
= Rated, Tc = 125°C
0.2
V
Holding Current
I
H
V
D
= 12V, I
TM
= 1A
10 mA
Thermal Resistance
R
th (j-c)
Junction to Case, AC
40
°C
/
W
Thermal Resistance
R
th (j-a)
Junction to Ambient, AC
180
°C
/
W
MARKING
NUMBER SYMBOL
MARK
*1 TYPE
SM1L43
M1L43
*2
Example
8A : January 1998
8B : February 1998
8L : December 1998
SM1L43
2001-07-10
3
SM1L43
2001-07-10
4

SM1L43
2001-07-10
5

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000707EAA
RESTRICTIONS ON PRODUCT USE