SF8GZ47,SF8JZ47
2001-07-13
1
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak off-State Voltage : V
DRM
= 400, 600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400, 600V
l Average On-State Current
: I
T (AV)
= 8A
l Isolation Voltage
: V
Isol
= 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
SF8GZ47 400
Repetitive Peak
Off-State Voltage
and Repetitive Peak6
Reverse Voltage
SF8JZ47
V
DRM
V
RRM
600
V
SF8GZ47 500
Non-Repetitive Peak
Reverse Voltage
(Non-Repetitive <5ms,
T
j
= 0~125°C)
SF8JZ47
V
RSM
720
V
Average On-State Current
(Half Sine Waveform Tc = 72°C)
I
T (AV)
8 A
R.M.S On-State Current
I
T (RMS)
12.6 A
120 (50 Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
132 (60 Hz)
A
I
2
t Limit Value
I
2
t 72
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di / dt
100
A / µs
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
FGM
10 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 °C
Storage Temperature Range
T
stg
-40~125 °C
Isolation Voltage (AC, t = 1 min.)
V
ISOL
1500 V
Note 1: di / dt test condition,
V
DRM
= 0.5 × Rated, I
TM
25A, t
gw
10µs,
t
gr
250ns, i
gp
= I
GT
× 2.0
JEDEC
JEITA
TOSHIBA 13-10H1B
Weight: 1.7g
Unit: mm
SF8GZ47,SF8JZ47
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
10 µA
Peak On-State Voltage
V
TM
I
TM
= 25 A
1.5 V
Gate Trigger Voltage
V
GT
1.0 V
Gate Trigger Current
I
GT
V
D
= 6 V, R
L
= 10
10 mA
Gate Non-Trigger Voltage
V
GD
V
D
= Rated × 2 / 3, Tc = 125°C
0.2
V
Critical Rate of Rise of Off-State Voltage
dv / dt
V
DRM
= Rated, Tc = 125°C
Exponential Rise
50 V
/
µs
Holding Current
I
H
V
D
= 6 V, I
TM
= 1 A
40 mA
Latching Current
I
L
V
D
= 6 V, f = 50Hz,
t
gw
= 50 µs, i
G
= 30 mA
50 mA
Thermal Resistance
R
th (j-c)
Junction
to
Case
3.7
°C
/
W
MARKING
F8GZ47 SF8GZ47
*1 TYPE
F8JZ47
TYPE
NAME
SF8JZ47
*2
Example
8A:January 1998
8B:Febrary 1998
8L:December 1998
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