SF0R3G42
2001-07-13
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R3G42
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l Repetitive Peak Off-State Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage
: V
RRM
= 400V
l Average On-State Current
: I
T (AV)
= 300mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
(R
GK
= 1k)
V
DRM
V
RRM
400 V
Non-Repetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
R
GK
= 1k, T
j
= 0 ~ 125°C)
V
RSM
500 V
Average On-State Current
(Half Sine Waveform Ta = 45°C)
I
T (AV)
300 mA
R.M.S On-State Current
I
T (RMS)
450 mA
9 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
9.9 (60Hz)
A
I
2
t Limit Value
I
2
t 0.4
A
2
s
Peak Gate Power Dissipation
P
GM
0.1 W
Average Gate Power Dissipation
P
G (AV)
0.01 W
Peak Forward Gate Voltage
V
FGM
3.5 V
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
-40~125 °C
Storage Temperature Range
T
stg
-40~125 °C
Note:
Should be used with gate resistance as follows.
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 13-5A1A
Weight: 0.2g
SF0R3G42
2001-07-13
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= Rated
R
GK
= 1k, T
j
= 125°C
100
µA
Peak On-State Voltage
V
TM
I
TM
= 2A
2.0 V
Gate Trigger Voltage
V
GT
0.8 V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 100, R
GK
= 1k
200
µA
Gate Non-Trigger Voltage
V
GD
V
D
= Rated, R
GK
= 1k,
Ta = 125°C
0.2
V
Holding Current
I
H
R
L
= 100, R
GK
= 1k
4 mA
Thermal Resistance
R
th (j-a)
Junction to Ambient
250
°C
/
W
MARKING
NUMBER SYMBOL
MARK
*1 TYPE SF0R3G42 F0R3G
*2
Example
8A
:
January
1998
8B : February 1998
8L : December 1998
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