2SK3374
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
F-MOSV)
2SK3374
Switching Regulator Applications
· Low drain-source ON resistance: R
DS (ON)
= 4.0 W (typ.)
· High forward transfer admittance: ïY
fs
ï = 0.8 S (typ.)
· Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 450 V)
· Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25°C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
450 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
450 V
Gate-source voltage
V
GSS
±30 V
DC (Note
1) I
D
1
A
Drain current
Pulse (Note
1)
I
DP
2
A
Drain power dissipation
P
D
1.3 W
Single pulse avalanche energy
(Note
2)
E
AS
122 mJ
Avalanche current
I
AR
1
A
Repetitive avalanche energy (Note 3)
E
AR
0.13
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55 to150
°C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
R
th (ch-a)
96.1
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 203 mH, R
G
= 25 W, I
AR
= 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-8M1B
Weight: 0.54 g (typ.)
2SK3374
2002-08-09
2
Electrical Characteristics
(Ta
=
=
=
=
25°C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V, V
DS
= 0 V
¾
¾
±10
mA
Drain-source breakdown voltage
V
(BR) GSS
I
G
= ±10 mA, V
DS
= 0 V
±30
¾
¾
V
Drain cut-OFF current
I
DSS
V
DS
= 450 V, V
GS
= 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
450
¾
¾
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
¾
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 0.5 A
¾
3.7 4.6
W
Forward transfer admittance
ïY
fs
ï
V
DS
= 10 V, I
D
= 0.5 A
0.3
0.7
¾
S
Input capacitance
C
iss
¾
180
¾
Reverse transfer capacitance
C
rss
¾
2
¾
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
¾
20
¾
pF
Rise time
t
r
¾
7
¾
Turn-ON time
t
on
¾
15
¾
Fall time
t
f
¾
30
¾
Switching time
Turn-OFF time
t
off
¾
70
¾
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
¾
5
¾
Gate-source charge
Q
gs
¾
3
¾
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 360 V, V
GS
= 10 V, I
D
= 1 A
¾
2
¾
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25°C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
¾
¾
¾ 1 A
Pulse drain reverse current
(Note 1)
I
DRP
¾
¾
¾ 2 A
Forward voltage (diode)
V
DSF
I
DR
= 1 A, V
GS
= 0 V
¾
¾
-1.7
V
Reverse recovery time
t
rr
¾ 350 ¾ ns
Reverse recovery charge
Q
rr
I
DR
= 1 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
¾ 1.3 ¾ nC
Marking
Type
K3374
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 400 W
V
DD
~
- 200 V
I
D
= 0.5 A
V
OUT
10
9
2SK3374
2002-08-09
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
ï
Y
fs
ï
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
- V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
- V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
- V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
- V
GS
Drain current I
D
(A)
ïY
fs
ï - I
D
Drain current I
D
(A)
R
DS (ON)
- I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
0
1.0
0.2
0.6
0.4
0.8
2
0
10
4 6 8
Common source
Ta
= 25°C
pulse test
VGS = 4.5 V
5.0
5.5
10
6.0
4.75
5.25
8.0
5.75
Common source
Ta
= 25°C
pulse test
0
2.0
0.4
1.2
0.8
1.6
10
0
50
20
30 40
VGS = 4.5 V
10
6.25
5.5
5.25
6.0
8.0
5.75
5.0
Common source
VDS = 20 V
pulse test
0
2.0
0.4
1.2
0.8
1.6
2
0
10
4 6 8
Ta
= -55°C
25
100
0
20
4
12
8
16
4
0
20
8
12 16
0.5
Common source
Ta
= 25°C
pulse test
ID = 1 A
0.25
25
0.01
0.01
5
10
0.3
0.1
0.03
0.1 0.3
1 3
0.03
Common source
VDS = 20 V
pulse test
Ta
= -55°C
100
1
0.5
0.05
3
30
50
Common source
Ta
= 25°C
Pulse test
0.1 1
0.3 0.5
3 5
3
10
5
1
10
2SK3374
2002-08-09
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Ambient temperature Ta (°C)
RDS (ON) - Ta
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
IDR - VDS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance
- VDS
C
apaci
t
anc
e C
(p
F)
Ambient temperature Ta (°C)
V
th
- Ta
Ambient temperature Ta (°C)
P
D
- Ta
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
5
1
3
2
4
0
-80
0
40
80
120
160
-40
Common source
VDS = 10 V
ID = 1 mA
pulse test
2.0
0.4
1.2
0.8
1.6
0
0
80
120
200
40
160
0
16
4
8
12
-40
-80
160
0 40 80
Common source
VGS = 10 V
pulse test
ID = 1A
0.25
0.5
0.01
10
0.03
0.3
3
-0.2
0
-1.2
-0.6
-0.4
-0.8
-1.0
10
3
1
VGS = 0, -1 V
1
0.1
Common source
Ta
= 25°C
pulse test
500
100
300
200
400
0
0
4
6
8
10
2
Common source
ID = 1 A
Ta = 25°C
pulse test
180
VDS = 360 V
VDS
VGS
20
4
12
8
16
0
90
10
30
100
1
0.1 100
10
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
1
3
50
300
0.3 0.5
3
5
30 50
500
5
2SK3374
2002-08-09
5
r
th
- t
w
Safe operating area
E
AS
- T
ch
Pulse width t
w
(S)
Channel temperature (initial) Tch (°C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r th (t)
/R
th
(c
h-a
)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
D
r
ai
n
cu
rre
nt
I
D
(A
)
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 203 mH
÷
÷
ø
ö
ç
ç
è
æ
-
×
×
×
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
0.001
0.1
1
3
0.3
0.01
10
m 100
m
1 m
10 m
1
10
100
T
PDM
t
Duty
= t/T
Rth (ch-a) = 96.1°C/W
Duty
= 0.5
0.1
Single Pulse
0.02
0.0005
0.003
0.03
0.05
0.5
100 m
0.01
0.05
0.2
0.001
0.1
0.01
0.1
1
10
10 100 1000
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
ms *
DC operation
Ta
= 25°C
1 ms *
VDSS max
1
0
25
30
60
90
150
120
50
75
100 125 150
Drain-source voltage V
DS
(V)
2SK3374
2002-08-09
6
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP